国家/地区 美国（9）
IPC部 H（6） B（5） C（3）
IPC大类 H01（6） B82（4） C01（2）
IPC小类 H01L（5） B82Y（4） C01B（2）
IPC H01L029/06（5） B82Y040/00（4） H01L021/336（4）
H01L029/78（4） B82Y099/00（3） B82Y030/00（2）
C01B032/184（2） H01L021/20（2） H01L029/16（2）
H01L029/66（2） H01L029/775（2） H01L029/786（2）
发明人 ZHU H（9）
公开年 2012（2） 2013（2）
申请年 2011（2）  2012（2）  2021（2） 
专利权人 INST MICROEL.（5） ZHU H（5） LIANG Q（3） JIN Z（2）
LUO Z（2） YIN H（2） ZHONG H（2）

Preparing patterned graphene, comprises forming accommodating passage in silicon carbide base, providing catalyst and insulating substrate, placing catalyst in accommodating passage, and placing sandwich structure in heating device.

GAO B, ZHANG C, GU J, WU T, ZHU H

Bionic fiber functional material used in low concentration heavy metal ion adsorption, is rich in multiple adsorption sites, that is, N, O, and S sites that have adsorption properties for heavy metal ions and material.

HE H, WANG L, ZHU H, ZHOU H, WANG S, HO H, ZHU H X, CHOU H

Light transmission controlling device, has copper-reduced graphene oxide core-shell nanowires film layer resided on layer of polymeric matrix, and layer of transparent substrate arranged on layer of core-shell nanowires film layer.

HUANG S, REN F, MA D, ZHU H, ZHAO S, ZHANG D, XIAO S

Graphene-porous ferric oxide nanorod comprises graphene, which is loaded on ferric oxide nanoparticles, and is prepared by mixing graphene oxide and fibroin solution.

LV Q, SHENG W, ZHU H

Graphene device for use as multi-channel selective device, e.g., multiplexer or demultiplexer, has graphene channels which are in contact and electrically connected with gate, in which graphene channels and gate have different angles.

JIN Z, LIANG Q, LIU X, YE T, ZHONG H, ZHU H, CHEN D

Forming graphene nano-ribbon to form metal-oxide-semiconductor field effect transistor involves forming stack of seed/growth blocking layer on insulating substrate, then patterning and growing graphene nano-ribbon at seed layer side surface.

LIANG Q, LUO Z, YIN H, ZHU H

Semiconductor device, has cap layer set on gate stack and sidewall surrounding gate stack and cap layer, and semiconductor layers epitaxially grown on exposed graphene layer, where metal contact layers are formed on semiconductor layers.

YIN H, LUO Z, ZHU H

Graphene device structure for use in complementary metal oxide semiconductor device, has semiconductor doped region and graphene layer that are formed as drain region and source region of device structure respectively.

LIANG Q, JIN Z, WANG W, ZHONG H, LIU X, ZHU H, YE T

Graphene device structure for complementary metal-oxide-semiconductor, has semiconductor doped regions separated from gate region, where contacts of structure are formed on semiconductor doped regions.

LIU X, ZHU H, WANG W, LIANG Q, JIN Z, ZHONG H, YE T