国家/地区 中国（6）
IPC部 H（4） B（2）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC H01L021/336（2）
发明人 ZHUANG Y（6）
公开年 2014（4） 2013（2）
申请年 2013（6）
专利权人 UNIV XIDIAN（5）

Graphene far infrared ray detector for high property graphite alkenyl infrared focal plane array sensor, has graphene infrared photoelectric transistor comprising graphene quantum point comprising single or double-layer graphene thin film.

ZHANG P, MA Z, WU Y, ZHUANG Y, FENG Y, ZHAO Y, CHEN Y

Graphene temperature sensor for use in aerospace field, has structure made of top gate electrode, alloy film, upper silicon dioxide layer, silsesquioxane, graphene layer, electrode, lower silicon dioxide layer, substrate and gate electrode.

ZHANG P, MA Z, WU Y, ZHUANG Y, FENG Y, ZHAO Y, CHEN Y

Integrated circuit preparation method, involves growing up silicon wafer of sulfur dioxide by utilizing evaporation process, and exposing hexagonal boron nitride layer on surface of graphene containing layer by metal evaporation process.

ZHANG P, MA Z, WU Y, ZHUANG Y, FENG Y, ZHAO Y, CHEN Y

Graphene composite material for nano-iron purification, comprises graphene matrix containing nano-iron and nano-silver.

YU S, LI M, ZHANG E, ZHUANG Y

Large-size stacked structure of graphene wafer used in e.g. silicon-based semiconductor device, is provided with single crystal graphene layer, boron nitride layer, single crystal boron nitride layer and silicon dioxide wafer substrate.

GUO C, MA Z, ZHANG P, WU Y, ZHUANG Y, XIAO Z, FENG Y, ZHAO Y

Multi-layer graphene double-grid FET for use in high frequency large power device, has transistor unit formed with multiple layers, where source and drain electrodes of transistor unit are connected together in parallel manner.

GUO C, MA Z, ZHANG P, WU Y, ZHUANG Y, XIAO Z, FENG Y, ZHAO Y