国家/地区 中国（8）
IPC部 H（6）
IPC大类 H01（6）
IPC小类 H01L（6）
IPC H01L029/78（5） H01L029/423（3） H01L021/336（2）
H01L029/16（2）
发明人 ZHUANG Y（8）
公开年 2013（8）
申请年 2012（5）  2013（2） 
专利权人 UNIV XIDIAN（8）

Graphene FET has source electrode and drain electrode that are respectively located at two ends of graphene channel layer.

ZHANG P, BAO J, MA Z, WU Y, ZHUANG Y, ZHANG C

Carbon nano-tube probe tip, has probe tip main body provided with thin film that is made of graphene material.

ZHANG P, BAO J, MA Z, WU Y, ZHUANG Y, CHEN Q

Graphene nano-belt FET, has gate dielectric layer placed at upper and lower sides of channel layer, substrate formed with gate dielectric layer, and source electrode and drain electrode placed at two ends of channel layer.

ZHANG P, BAO J, MA Z, WU Y, ZHUANG Y, ZHANG C

Large-size stacked structure of graphene wafer used in e.g. silicon-based semiconductor device, is provided with single crystal graphene layer, boron nitride layer, single crystal boron nitride layer and silicon dioxide wafer substrate.

GUO C, MA Z, ZHANG P, WU Y, ZHUANG Y, XIAO Z, FENG Y, ZHAO Y

Multi-layer graphene double-grid FET for use in high frequency large power device, has transistor unit formed with multiple layers, where source and drain electrodes of transistor unit are connected together in parallel manner.

GUO C, MA Z, ZHANG P, WU Y, ZHUANG Y, XIAO Z, FENG Y, ZHAO Y

Graphene nanoribbon FET comprises gate dielectric layers that are respectively located at upper side and lower side of channel layer, and source and drain electrodes that are respectively located at ends of channel layer.

ZHANG P, WU Y, BAO J, MA Z, ZHUANG Y, ZHANG C

Preparation of graphene involves adding graphite powder to nonaqueous polar solvent, mixing uniformly, obtaining mixed solution, washing, centrifuging and filtering.

LING Y, MA Z, ZHANG P, WU Y, ZHUANG Y, XIAO Z

Graphene FET, has substrate formed with gate dielectric layer, source electrode and drain electrode that are respectively located at two ends of graphene channel layer, and top gate electrode arranged on top part of gate dielectric layer.

MA Z, ZHANG P, ZHANG C, ZHUANG Y, BAO J, WU Y