国家/地区 韩国（8） 美国（4） 日本（2） 世界知识产权组织（2）
IPC部 B（9） C（8） H（4）
IPC大类 B01（9） C01（8） H01（4）
IPC小类 B01J（9）
IPC B01J019/08（9）
发明人 JUNG M（3） MOON J（3） PARK W（3）
RHO J（3） SEO B（3） CHOI J H（2）
HWANG I T（2） JUNG C H（2）
公开年 2013（9）
申请年 2012（9）
专利权人 LG ELECTRONI.（3） KOREA ATOMIC.（2） KOREA HYDRO .（2）

Graphene transfer method involves forming graphene on substrate, coating mixture containing polystyrene and solvent on the graphene, forming protective layer, and removing substrate and protective layer.

KIM U J, HUR J H, KIM J E, ROH Y G, PARK Y S, LEE C W, LEE J S, CHEON S M

Device used for manufacture of graphene, has chamber having inlet portion, and exhaust portion, substrate positioned within chamber and heating unit.

PARK W, JUNG M, RHO J, SEO B, MOON J

Apparatus, useful for growing graphene that is used in display device, comprises substrate positioned within chamber, heating portion heating substrate, and supply unit supplying induced current to heating unit.

PARK W, JUNG M, RHO J, SEO B, MOON J

Device, useful for producing graphene, comprises a current supply unit for supplying current to a formation area through a contact unit, and a storage unit that receives metal catalyst in roll state, where contact unit contacts chamber.

RHO J, PARK W, JUNG M, SEO B, MOON J

Manufacture of graphene used for e.g. thin conductive film, transparent electrode, memory device, solar cell, organic light-emitting device, and biodevice, involves irradiating gamma-ray to graphene oxide solution and reducing.

CHOI J H, HWANG I T, JUNG C H, PARK Y W

Preparing graphene used in e.g. memory device, comprises forming organic thin film on substrate, irradiating upper portion of organic thin film with radiation to cross-link organic thin film, and then carbonizing.

CHOI J H, JUNG C H, HWANG I T, KANG D W

Preparing graphene which is used for construction of devices e.g. integrated circuits, comprises bombarding a surface of a silicon carbide substrate with ions (of e.g. gold), and annealing a volume of the substrate at the bombarded surface.

GILA B P, APPLETON B R, LEMAITRE M G, TONGAY S

Metal powder for use as inner electrode of multilayered ceramic capacitor, comprises graphene layer, which is irregularly formed on surface of metal powder.

KIM W C, LIM H H, WI S K, LEE K S, WOON C K, HYUN H L, SUNG K W, IVY L

Method of etching atomic layer of graphene used for semiconductor device, involves adsorbing reactive radical to surface of graphene, and irradiating energy source to graphene to which reactive radical is adsorbed.

YEOM G Y, LIM W S, MIN K S, KIM Y Y, OH J S