国家/地区 世界知识产权组织（4） 韩国（3） 美国（3） 中国（2） 欧洲专利局（EPO）（2） 日本（2） 新加坡（2）
IPC部 B（6）
IPC大类 B01（6）
IPC小类 B01J（6）
IPC B01J019/08（6）
发明人
公开年
申请年 2014（2） 
专利权人

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Device useful for processing graphene by plasma surface modification comprises e.g. vacuum chamber provided with air charging hole and air pumping hole, and counter electrode connected with radio frequency power supply system.

ZHANG B, JIN X, ZHU L, YU W, MA W, NIE J, LIU K

Device useful in graphene manufacturing device to coat particle surface with graphene using underwater plasma discharge, comprises e.g. chamber having solution and particles dispersed in solution, discharge electrode and power supply unit.

PARK H J, KANGIL K, HONG Y C

Graphene producing device has cathode and anode which are configured to create arc discharge producing flux stream, and to deposit material from flux stream on substrate.

KEIDAR M, SHASHURIN A

Electron microscopy support, useful for receiving biological sample e.g. serum, plasma and saliva, comprises support member, and partially hydrogenated graphene attached to member, where member is attached to support film.

RUSSO C J, PASSMORE L A, RUSSO C, PASSMORE L

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A