国家/地区 中国（13）
IPC部 B（13）
IPC大类 B01（13） H01（13） C01（9）
B82（4） C23（4） C09（3）
IPC小类 B01J（13）
IPC B01J019/08（13）
发明人 JIANG Z（2） KIM S（2）
公开年 2015（5） 2017（2） 2021（2） 2022（2）
申请年 2015（3）  2013（2）  2014（2）  2016（2）  2021（2） 
专利权人 UNIV SOUTH C.（2）

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Improving water dispersibility of conductive carbon powder, involves exposing conductive carbon powder to plasma jet or reacting with plasma-treated reaction gas.

SEOK D C, JUNG Y H, YOO S R, JEONG Y H, YOO S Y, RYU S, ZHENG R, SHI D

Synthesis device for preparing metal lithium-carbon/nano-metal composite material used as cathode material of metal lithium battery, has vacuum electrodes at ends of reaction chamber, pulse power supply, precursor fixer and vacuum pump.

WANG X, TU J, ZHONG Y, XIA X

Applying functional compound on sulfur particles for forming treated sulfur particles, involves using coating composition containing inorganic electroconductive compound, electroconductive carbon compound and organic precursor compound.

HAVERMANS D, SALLARD S, SHAFIQUE A, VANGENEUGDEN D, VANHULSEL A, HARDY A, SALAH S, SHAFIK A, VAN GENUGDEN D, HARDY N

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Membrane for providing selective permeability in filtration applications, comprises sheet of graphene-based material having perforations with specified pore size, non-graphenic carbon-based material, and contact areas between materials.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M, BULLOCK S E, LIU H, SINSABAUGH S L

Preparing graphene doped perforated material involves adding graphene oxide to water, performing ultrasonic dispersion of mixture to obtain graphene oxide solution, and then adding concentrated nitric acid to graphene oxide solution.

JIANG Z

Manufacture of heteroatom-doped porous graphene electrocatalyst for cathode material, involves applying liquid of perforated-surface graphene oxide, heteroatom compound and solvent on substrate, supplying reducing gas and heating.

JIANG Z

Particle for particulate material used for composite material, particle dispersion and article comprises stacked sub-structures in which each sub-structure includes stack of graphene layers.

WALTERS I, WALTERS D

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H