国家/地区 美国（8） 中国（3） 世界知识产权组织（3） 韩国（2） 新加坡（2）
IPC部 B（8） C（8） H（5）
IPC大类 B32（8） C01（8） H01（4）
B01（3） B82（3） C08（3）
C23（2）
IPC小类 B32B（8）
IPC B32B009/00（8）
发明人 KIM H（2） PARK H（2）
公开年 2015（8）
申请年 2015（8）
专利权人 INT BUSINESS.（2）

Graphene dissipation structure for e.g. heat dissipation devices, has substrate containing surfaces, and graphene dissipation layer containing surface-modified graphene nano sheets, carrier resin and filler, in specified weight ratio.

WU M Y, HSIEH C, CHEN J, HSIEH S, LI K, XIE S, WU Y, XIE C, LI G, HSIEH C Y, CHEN J R, HSIEH S L, LI K T

Method for forming patterned graphene layer on substrate of electronic device, involves removing patterned structure to produce patterned graphene layer on substrate, where patterned graphene layer on substrate provides carrier mobility.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Use of reduced graphene oxide laminate membrane as barrier material in which reduced graphene oxide is formed from reduction of graphene oxide with reducing agent.

RAVEENDRANNAIR R, SU Y, GEIM A, RAVEENDRAN N R

Composite film, has oxide graphene coating layer whose contact angle is maintained on porous polymer supporter at specific degrees, where width of oxide graphene coating layer is in specific range.

PARK H B, KIM H W, CHO Y, YOO B M, HWANG Y S, HO B P, HWANG Y, KIM H, PARK H, YOO B, ZHAO Y

Transferring of graphene to polymeric substrate for device substrate preparation involves heating polymeric substrate to partially melt polymeric substrate, compressing partially melted polymeric substrate against graphene, and cooling.

MACEDO F G J, OZYILMAZ B, CASTRO A H, MARTIN F I

Solid state device structure for graphene device for use in microelectronics application, has single crystalline graphene monolayer placed on substrate including surface area of greater than specific range.

DIMITRAKOPOULOS C D, FOGEL K E, KIM J, PARK H

Molecular filter used for purifying and filtering water e.g. wastewater and seawater, comprises graphene sheet(s), graphene-oxide sheet(s) and optionally edge-functionalized graphene-oxide layer(s).

CHIU G

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H