国家/地区 美国（8）
IPC部 C（8）
IPC大类 C01（8） H01（8） B29（3）
C09（3） B32（2） B82（2）
IPC小类 C01B（8）
IPC C01B031/00（8）
发明人 JANG B Z（2） ZHAMU A（2）
公开年 2015（3） 2017（3） 2016（2）
申请年 2015（8）
专利权人 JANG B Z（2） NANOTEK INST.（2） ZHAMU A（2）

Production of electrically conductive composite material involves mixing suspension of dissolved polymer and non-conductive filler dispersing-aid and suspension of individual graphene units, adding antisolvent, and drying precipitate.

BOSE A, CHAKRABORTY I

Making unitary graphene matrix composite used in LED, comprises e.g. preparing graphene oxide gel having graphene oxide molecules dispersed in fluid medium, and mixing graphite filler phase in gel and dispensing onto cavity of molding tool.

ZHAMU A, JANG B Z

Making integral 3-dimensional graphene-carbon hybrid foam used e.g. to make fumed heat sink and heat pipe, comprises e.g. mixing multiple particles of -graphitic material and -solid polymer carrier material in impacting chamber.

ZHAMU A, JANG B Z

Method for generating light emission from electrically biased graphene for electrodes and optoelectronic applications, involves providing current to graphene membrane to establish source-drain bias voltage along graphene membrane.

KIM Y D, WANG L, LEE S, HONE J

Production of functionalized graphene for lithium-ion batteries involves milling crystalline graphite in the presence of electrolyte solution to produce thinned intermediate material, combining with other electrolyte solution, and milling.

BOZALINA M, PERRET P, NAZARPOUR S, NAZARPOUR S S N

Polymer composition for forming active layer of e.g. solar cell comprises homogeneous dispersion containing graphene oxide or reduced graphene oxide and a polymer immiscible in poly(3-hexylthiophene-2,5-diyl).

RAFAILOVICH M, ISSEROFF R, HONGFEI L, CHEN A, HONFEI L, LI H

Solid state device structure for graphene device for use in microelectronics application, has single crystalline graphene monolayer placed on substrate including surface area of greater than specific range.

DIMITRAKOPOULOS C D, FOGEL K E, KIM J, PARK H

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H