国家/地区 日本（58）
IPC部 C（58）
IPC大类 C01（58） B82（41） H01（39）
C23（16） B32（14） B05（9）
C08（9） C07（7） C09（7）
C30（7） B01（4） C25（4）
B44（3） C03（3） D01（3）
IPC小类 C01B（58）
IPC C01B031/02（58）
发明人 FUJII K（5） CHUNG H（4） CHUNG H J（4）
FAN S（4） HEO J（4） HEO J S（4）
JIANG K（4） SEO S（4） SEO S A（4）
SHIMIZU A（4） VEERASAMY V（4） VEERASAMY V S（4）
WOO Y（4） WOO Y S（4） BAE S K（3）
公开年 2011（58）
申请年 2010（27）  2009（16）  2011（15） 
专利权人 SAMSUNG ELEC.（6） FUJI ELECTRI.（5） GUARDIAN GLA.（4） GUARDIAN IND（4）
GUARDIAN IND.（4） HON HAI PREC.（4） HONGFUJIN PR.（4） UNIV TSINGHU.（4）
FUJI ELECTRI.（3） UNIV SUNGKYU.（3） UNIV SUNGKYU.（3） UNIV SUNGKYU.（3）
UNIV SUNGKYU.（3） BAYER TECHNO.（2） DOKURITSU GY.（2） GRAPHENE SQU.（2）
HITACHI LTD（2） OKAI M（2） SONY CORP（2） SUH K S（2）

Forming graphene used in e.g. bioanalytics involves providing graphite sample having atomic layers of carbon; introducing solvent and ions into spaces between the atomic layers; expanding space; and separating the layers using driving force.

LOH K P, WANG J, JUNZHONG B, LOH K, LUO J, ZUNZHONG W

Negative-electrode active material used for lithium ion secondary batteries, comprises short-length cup-stack type carbon nanotube having laminate of two or more cup type graphene sheets and cup type graphene sheets with open bottom.

SHIOZAKI S

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S

New functionalized graphene compound comprising graphene and fluorine having specific fluorine to carbon ratio used as structural material, electronic component, optical component, magnetic component or coating.

GEIM A, RAVEENDRANNAIR R, NOVOSELOV K, RAEBINDEURAN N R, RAVEENDRAN N R

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O

Film, useful in semiconductor devices for displays devices and field effect transistors, comprises a base layer having amino groups, and a reduced graphene oxide layer formed on the base layer.

KOBAYASHI T, TOSHIYUKI K

Preparation of graphene-type conductive material involves applying oxide graphene sol and metal salt solution and/or metal colloidal solution on substrate layer, separating, forming solid film and treating at specified condition.

LIANG M, ZHI L

Resin plating comprises forming a graphene thin layer on a resin substrate and electroplating the resin substrate having the graphene thin layer formed on it.

BAE A H, SON S I, NAM J D, LEE J H, HWANG T S, OH J S, LEE H, EAH H B, SANG I S, JAE D N, JOON S O, JUN H L, TAE S H, HWANG T, LEE J, NAN J, PAE A, SUN S, OU J

Method of forming graphene film on silicon carbide substrate for electronic device materials involves planarizing surface of silicon carbide single crystal, washing and annealing in vacuum.

YAMAUCHI K, HATTORI A, ARIMA K, SANO Y

Article e.g. photodetector, comprises graphene layer having work function and metal oxide film having work function greater than work function of graphene layer, formed on graphene layer.

CHEN W, CHEN Z, WEE T S A, XIE L, WANG X, SUN J, ARIANDO, HWANG J, CHEN V, CHEN ZH, WEE T SH A, SUN Y