国家/地区 世界知识产权组织（33）
IPC部 C（33）
IPC大类 C01（33） B82（25） H01（25）
B32（12） B05（8） C08（8）
C23（8） C09（6） C30（5）
C03（3） C07（3） C25（3）
B01（2） B29（2） B44（2）
IPC小类 C01B（33）
IPC C01B031/02（33）
发明人 AKSAY I A（3） VEERASAMY V（3） VEERASAMY V S（3）
AKSAY I（2） KAWASHIMA Y（2） KAWASHIMA YASUSHI（2）
LIU J（2） LOLLI G（2） MLECZKO L（2）
SCHLUETER O F（2） SCHLUETER O F K（2） SCHLUTER O F（2）
WANG D（2） WOLF A（2）
公开年 2010（12） 2011（11） 2009（10）
申请年 2009（33）
专利权人 AKSAY I A（3） GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）
UNIV PRINCET.（3） BATTELLE MEM.（2） BAYER TECHNO.（2） COMMISSARIAT.（2）
KAWASHIMA Y（2） KAWASHIMA YA.（2） LIU J（2） UNIV PRINCET.（2）
WANG D（2）

Normal-temperature superconductor used for manufacturing ferromagnetic material for electromagnetic coil, comprises substance containing graphene, and proton donor.

KAWASHIMA YASUSHI, KAWASHIMA Y

Graphene oxide sheet used for graphene-containing material, is obtained by dispersing graphene-containing carbon substance using dispersing agent to reduce size of aggregation unit of carbon substance, and oxidizing resulting product.

FUGETSU B

Air electrode for use in air battery, has graphene layers that are oriented in given direction, and basal plane of carbon material that is appeared upon surface of carbon material.

MIZUNO F, NISHIKORI H, HIGASHI S

Producing a graphene-solution, useful for producing a composite material, which is useful in batteries, capacitors, paints, coatings and catalysts, comprises reducing graphite with an alkali metal salt in a polar organic solvent.

WOLF A, LOLLI G, MLECZKO L, SCHLUETER O F, SCHLUETER O F K, SCHLUETER O, SCHLUTER O F

Manufacturing structure comprising semiconductor substrate and modified graphene layer, comprises supplying initial structure comprising standard graphene layer, and hydrogenating initial structure with exposure dosage of hydrogen gas.

CHIANG S, ENRIQUEZ H, OUGHADDOU H, SOUKIASSIAN P, TEJEDA G A, VIZZINI S, TEJEDA GALA A, GALA A T

Composite material, useful for producing graphene layers material, comprises a layered double hydroxide or a layered silicate and a polyacrylonitrile, which is at least partially decomposed to graphene layers.

WOLF A, LOLLI G, MLECZKO L, SCHLUETER O F, SCHLUETER O F K, SCHLUTER O F

Manufacture of nano graphene-based material used for e.g. rechargeable batteries, involves mixing graphite sulfuric slurry and potassium permanganate sulfuric solution and then adding aqueous hydrogen peroxide solution to mixture.

KWON Y J, KIM J H, GU J W, PARK W H, KIM S B, SHIN C M, JI B K, KWON D H, PARK S Y, JI B, GU J, KWON Y, PARK W, KWON D, SHIN C

Manufacture of graphene for layered structure, involves exposing silicon substrate to primary gas containing carbon to form silicon carbide layer by carbonization of surface of silicon substrate, and supplying secondary gas having carbon.

KIM K, KIM K B

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V