国家/地区 日本（42）
IPC部 C（42）
IPC大类 C01（42） B82（30） H01（24）
C23（14） C08（9） B32（8）
C09（7） B05（6） C07（5）
C30（5） B01（4） D01（4）
B44（3） C03（3） C25（3）
IPC小类 C01B（42）
IPC C01B031/04（42）
发明人 FUJII K（5） VEERASAMY V（4） VEERASAMY V S（4）
BAE S K（3） HONG B H（3） SHIMIZU A（3）
AHN J（2） BAE S（2） CHOE P Y（2）
CHOI B（2） CHOI B L（2） CHUNG H（2）
CHUNG H J（2） GANG B S（2） GEUN K H（2）
公开年 2011（42）
申请年 2010（20）  2009（12）  2011（10） 
专利权人 FUJI ELECTRI.（5） GUARDIAN GLA.（4） GUARDIAN IND（4） GUARDIAN IND.（4）
SAMSUNG ELEC.（4） FUJI ELECTRI.（3） UNIV SUNGKYU.（3） UNIV SUNGKYU.（3）
UNIV SUNGKYU.（3） UNIV SUNGKYU.（3） UNIV SUNGKYU.（3） BASF SE（2）
BAYER TECHNO.（2） GRAPHENE SQU.（2） UNIV MANCHES.（2） UNIV RICE WI.（2）
UNIV SINGAPO.（2） UNIV SINGAPO.（2） VEERASAMY V .（2）

Forming graphene used in e.g. bioanalytics involves providing graphite sample having atomic layers of carbon; introducing solvent and ions into spaces between the atomic layers; expanding space; and separating the layers using driving force.

LOH K P, WANG J, JUNZHONG B, LOH K, LUO J, ZUNZHONG W

New functionalized graphene compound comprising graphene and fluorine having specific fluorine to carbon ratio used as structural material, electronic component, optical component, magnetic component or coating.

GEIM A, RAVEENDRANNAIR R, NOVOSELOV K, RAEBINDEURAN N R, RAVEENDRAN N R

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O

Article e.g. photodetector, comprises graphene layer having work function and metal oxide film having work function greater than work function of graphene layer, formed on graphene layer.

CHEN W, CHEN Z, WEE T S A, XIE L, WANG X, SUN J, ARIANDO, HWANG J, CHEN V, CHEN ZH, WEE T SH A, SUN Y

Spinning graphene ribbons into fibers to manufacture graphene ribbon fibers, comprises supplying spin-dope comprising graphene ribbons to spinneret, spinning spin-dope into accrued graphene ribbon fibers, and coagulating accrued fibers.

KOENDERS B M, MEERMAN J J, KAMPERMAN S M, WAARBEEK TER R F, JONG DE J, RADIER A A T, OTTO M J, WAARBEEK T R F, JONG D J, MEERMAN YA Y, JONG D Y, OTTO M YA

Producing two-dimensional nano-materials, useful in sensors, comprises adding sol precursor compound to mixture of graphene oxide particles or graphene particles and surfactant, reacting mixture in sol-gel process, and optionally heating.

IVANOVICI S, YANG S, FENG X, MUELLEN K, BIN Y S, KLAUS M

Formation of graphene used for semiconductor device, solar cell and flat panel display device, involves introducing carbon-type gas to surface vicinity of base material and heat processing surface of base material.

NAKASHIMA S, KATO S, UEHARA T, NAKANISHI K, MATSUMOTO M, FUKIDOME H, SUEMITSU M

Manufacture of graphene film used as preform of carbon material, involves oxidizing graphite, sieving, dispersing graphite oxide remained on sieve in solvent, peeling of graphite oxide in layer form and coating liquid on substrate.

FUJII K

Pressure sensor for measuring hydraulic pressures, has transistor equipped with graphene layer as channel, and wire containing piezoelectric material and whose one side is connected on gate of transistor.

YAGISHITA Y

Formation of graphene film used for electronic devices, involves forming metal film containing nickel or cobalt on sapphire substrate and subjecting to primary and secondary heat treatment.

NOZAWA K, YOSHII S