国家/地区 美国（32） 日本（31） 世界知识产权组织（29） 中国（25） 欧洲专利局（EPO）（25） 韩国（21） 台湾（9） 加拿大（8） 印度（8） 新加坡（4） 澳大利亚（3） 巴西（2） 西班牙（2） 英国（2） 香港（2） 墨西哥（2）
IPC部 C（39）
IPC大类 C01（39） H01（38） B82（14）
C08（8） H05（8） C09（7）
C23（7） B32（5） B01（4）
C04（4） B05（2） C07（2）
C30（2） G01（2）
IPC小类 C01B（39）
IPC C01B032/182（39）
发明人 TOUR J M（3） AKASAKA Y（2） AKITA M（2）
HARADA Y（2） JOHNSON B Y（2） KATSUYUKI N（2）
KIM J H（2） KUBOTA Y（2） LEE J（2）
MAZUMDER P（2） MIYAZAKI H（2） NAITO K（2）
NORIHIRO Y（2） PENG Z（2） SAKAI T（2）
公开年 2015（15） 2016（15） 2017（8）
申请年 2015（39）
专利权人 TOSHIBA KK（4） UNIV RICE WI.（3） UNIV RICE WI.（3） CORNING INC（2）
NAT INST ADV.（2） NINGBO INST .（2） TORAY IND IN.（2） TOSHIBA CORP（2）
UNIV CALIFOR.（2）

Planar electromagnetic filter has little dependence with angle of polarization and angle of incidence, and is composed of periodic arrangement of graphene rings of different dimensions placed at fixed distance.

DMITRIEV V, MONTE DO NASCIMENTO C

Graphene-based transistor used for graphene-based interconnect trace-containing device, comprises polycyclic aromatic hydrocarbon molecules provided on substrate, gate stack arranged on molecules, and conductive source/drain terminals.

ZIMMERMAN P A, YOUNG I A, TSAI W, ZIMMERMAN P

Hollow component used for forming negative electrode active material, comprises hollow structure comprising accumulated graphene, and transition metal oxide particles positioned between accumulated graphene and on surface of graphene.

TANG J, QIN L C, SHAO Q G

Optical sensor used for detecting position and movement of target component, comprises field-effect transistor containing graphene channel and light-absorption layer including nitrogen functionalized-nanographene containing semiconductor.

TEZUKA H, MATSUI T

Method for forming e.g. drain contacts for e.g. graphene FET, involves forming grown-in graphitic interface layer at interface between source and graphene surface source contacts and drain contact and graphene surface drain contact.

COLOMBO L, VENUGOPAL A

Method for manufacturing graphene film used in electronic device, involves blowing source gas containing carbon-type gas from nozzle on surface of base material, and carrying out forced diffusion of radical.

SAKAKIDA H, KIM J H

Production of integrated layer of highly oriented halogenated graphene sheets or molecules used as dielectric material component for microelectronic devices involves preparing graphene oxide dispersion or gel having graphene oxide sheets.

ZHAMU A, JANG B Z, ZHAMUARUNA

Heterojunction graphene nanoribbon for resonant tunneling diode comprises substrate, and first, second, and third graphene nanoribbon elements.

YAMAGUCHI J

Graphene wiring structure has multi-layer graphene portion whose outer surface is physically connected with side surface of orthogonal direction with respect to substrate of insulating film.

SAKAI T, YAMAZAKI Y, MIYAZAKI H, KATAGIRI M, KAJITA A, ISHIKURA T

Preparation of reduced and N-doped graphene oxide used in a transistor, comprises preparing mixed solution containing graphene oxide and tetramethylammonium hydroxide, and heating the mixed solution.

KHAN F, BAEK S, KIM J H, BAEK S H