国家/地区 中国（4） 世界知识产权组织（4） 日本（3）
IPC部 C（8）
IPC大类 C01（8）
IPC小类 C01B（8） H05K（5） C23C（4）
H01L（4） H05H（3） B82Y（2）
C01G（2） C04B（2）
IPC C01B032/186（8）
发明人 MATSUMOTO T（2） WADA M（2）
公开年 2022（8）
申请年 2022（5）  2021（3） 
专利权人 TOKYO ELECTR.（3）

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Method for preparing continuous film graphene conducting sheet, comprises annealing metal sheet under atmosphere of non-oxidizing gas and protective gas, introducing carbon-containing gas into metal sheet and placing metal sheet on lining bottom of heat-resistant pipe.

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Defective graphene/wave-transmitting ceramic composite wave absorbing material used as electromagnetic wave protection material, comprises defective graphene and wave-transmitting ceramics orderly deposited on surface of wave-transmitting nanowires.

ZHANG L, CAO Y, LIANG J, SONG Q, YE F

Preparing magnetic metal/graphene wave-absorbing material based on chemical vapor deposition comprises placing cobalt ferrite nanoparticle in methane atmosphere, carrying out chemical vapor deposition reaction, and cooling.

BAO S, JIANG Z

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T

Substrate processing method for processing substrate, involves performing first plasma processing while holding carried-in substrate in first position, and performing second plasma processing in state where substrate support pin is lowered and substrate is held at second position.

WADA M, KABUKI N, IFUKU R, MATSUMOTO T

Silicon-based bonded graphene radiating copper-clad ceramic substrate comprises copper foil layer orderly set from up to down, ceramic layer and silicon-based bonding graphene coating set on lower surface of ceramic layer.

LIANG X, JIA T, WU X, SUN X, YANG H, ZHANG G, RUAN S