国家/地区 中国（10）
IPC部 C（10）
IPC大类 C01（10）
IPC小类 C01B（10）
IPC C01B032/188（10）
发明人 LIU X（10）
公开年 2018（8） 2017（2）
申请年 2017（9） 
专利权人 CHENGDU GELA.（7） BEIJING HUAJ.（2）

Preparation of silicon carbide pyrolytic graphene, involves cleaning silicon carbide substrate, placing in annealing frame, and growing graphene on surface of substrate by silicon carbide high temperature thermal decomposition method.

YUAN Z, LIU X

Device used for preparing graphene comprises reaction device pipe, copper tube induction coil, high-frequency induction heating device, multiple nickel-chromium-iron alloy pallets, multiple metal porous plates and fan-shaped nozzles.

LIU X, WEI X, WEI Z

Device useful for preparing graphene by silicon carbide epitaxial growth, has reaction device, where tubular reactor is connected in series through pipeline, and tubular reaction device comprises copper tube and induction coil.

LIU X, WEI X, WEI Z

Device useful for preparing graphene by silicon carbide epitaxial growth, has air inlet device, reaction device and tail gas processing device, where air inlet device comprises air inlet pipe, gas flow controller and control valve.

LIU X, WEI X, WEI Z

Improved silicon carbide extrapolation device for preparing graphene, comprises copper tube which is set on reaction device, induction coil is set on copper tube, high-frequency induction heating apparatus is set with induction coil.

XINGCHONG L, WEI X, ZEZHONG W, LIU X, WEI Z

Efficient L-type graphene device comprises copper tube arranged on inner wall, induction coil arranged on copper tube, high-frequency induction heating device connected with induction coil, and multiple nickel-iron-chromium alloy trays.

LIU X, WEI X, WEI Z

Device for preparing graphene, comprises air inlet unit, reaction unit, and exhaust gas recycling unit, where air inlet unit comprises air inlet pipe, gas flow controller assembly and control valve assembly, and reaction unit.

LIU X, WEI X, WEI Z

Apparatus used for preparing graphene by detachable silicon carbide epitaxial method, comprises copper pipe, induction coil, high-frequency induction heating equipment, nickel-chromium-iron alloy trays and metal porous plates.

LIU X, WEI X, WEI Z

Preparing large-area regular epitaxial graphene doped with metal atoms comprises e.g. taking monocrystal silicon carbide substrate as growth substrate, heating the monocrystal silicon carbide sample and degassing.

HU T, MA F, XU K, MA D, LIU X, ZHANG X

Preparing graphene nanobelt comprises e.g. polishing the silicon carbide substrate wafer, pre-processing the substrate, pre-processing includes chemical cleaning, etching and removing hydrogen oxide, and using silicon carbide substrate.

LI B, LIU X, YUAN Z