国家/地区 中国（7） 美国（2）
IPC部 C（8）
IPC大类 C23（8）
IPC小类 C23C（8） C01B（2） G03F（2）
H01L（2）
IPC C23C014/16（8）
发明人 CHEN C（2） LI X（2） LIU P（2）
TU C（2）
公开年 2018（8）
申请年 2018（4）  2016（2）  2017（2） 
专利权人 TAIWAN SEMIC.（2）

Graphene coating material for enhancing surface hardness, comprises nickel, graphene material, alumina, titanium, molybdenum, chromium, silicon, silicon dioxide and cobalt, and has simple operation and strong feasibility.

LU W, LI X

Preparing graphene-nano-zinc-copper alloy core-shell structured conductive material comprises e.g. preparing zinc oxide thin film on the substrate using direct current magnetic control sputtering system, and perfroming annealing treatment.

ZHANG Y, ZHAO Z

Copper-graphene composite coating on an integrated circuit ceramic circuit board surface comprises a conforming coating adopts a gradient layer structure, a transition metal diffusion layer and a transition metal bonding layer.

YANG B, LEE K, LIU Y, WU Z, ZHAO X

Surface treatment of zero-valent chromium composite involves plating nickel composite film using copper plated semi-finished workpiece and graphene oxide chelated metal ion material, and carrying out vacuum composite chrome plating.

ZHAO T

Method of making a pellicle for use in extreme ultraviolet (EUV) lithography system, by depositing graphene layer over first material layer, and depositing amorphous silicon layer over graphene layer.

TU C, CHEN C, YOO C S, CHANG J, TSAI C, LIU P, LEE H, LIN C, LIN Y, TU Z, CHEN J, CAI J, YOU Q, ZHANG Z, LIN Z, LIU B, LI X, YOO C

Graphene pellicle method for extreme ultraviolet lithography, involves attaching carrier to graphene layer, removing substrate from first assembly, and removing first material layer from first assembly.

TU C, CHEN C

Preparing copper/graphene composite material involves using acetone, ethanol and de-ionized water for washing rolled copper foil, ultrasonic cleaning rolled copper foil with hydrochloric acid, and then cleaning copper foil.

ZHANG K, SONG R, LIU P, LI W, CHEN X, MA F, HE D, LIU X

Preparation of silicon-based germanium-doped graphene composite material used in e.g. solar cells, by placing silicon substrate/graphene in growth chamber, placing silicon buffer layer, depositing germanium and annealing.

YANG Y, ZHANG J, QIU F, WANG C, TONG L