国家/地区 中国（28） 美国（16） 世界知识产权组织（15） 欧洲专利局（EPO）（8） 韩国（8） 日本（7） 新加坡（4） 德国（3） 英国（2）
IPC部 C（36） B（14） H（9）
G（4） F（2）
IPC大类 C23（36） C01（20） B82（8）
H01（7） B32（6） C30（5）
G02（3） H05（3） B01（2）
IPC小类 C23C（36） C01B（20） B82Y（8）
B32B（6） C30B（5） H01L（5）
G02F（3） G02B（2） H05K（2）
IPC C23C016/26（36）
发明人 ZHANG Y（4） CHEN Z（2） HUANG X（2）
JIN H（2） LIU Z（2） PENG P（2）
YUAN G（2） ZHANG X（2） ZHOU Z（2）
ZHU M（2）
公开年 2013（36）
申请年 2013（36）
专利权人 CHANGZHOU 2D.（2） CHANGZHOU ER.（2） SHANDONG XIN.（2） UNIV SINGAPO.（2）

Preparing double-layer graphene thin film used in field of e.g. micro-electronics, comprises e.g. coating catalyst on the surface of metal foil/thin film substrate, drying, placing in reaction chamber, pumping vacuum, and filling hydrogen.

LI P, WANG Z, CHEN Y, ZHANG W, LIU J

Structure useful to shield electromagnetic disorders for shielding electromagnetic radiation, comprises thin layer of graphene and flexible substrate, in which thin layer of graphene is applied on flexible substrate and is doped with dopant.

AVOURIS P, GARCIA A V, SUNG C, XIA F, YAN H

Graphene growth device includes graphene deposition system, deposition furnace, vehicle, inner quartz tube, horizontal slide rail, heating system, vehicle body, furnace body, graphite mold, graphite alkenyl bottom, and opening end.

JIN H, LIU Z, ZHOU Z, PENG P

Saturable absorber device used in laser cavity for e.g. infrared detection comprises optical element, and absorber material with polarized ferroelectric material/graphene to form gate tunable graphene-ferroelectric hybrid saturable absorber.

OEZYILMAZ B, NI G X, ZHENG Y, OZYILMAZ B, OEZYILMAZ B

Device e.g. graphene nanoribbons useful in high speed and low power electronics comprises substrate, and first graphene nanoribbon overlying the substrate, where the first graphene nanoribbon has specific width.

ZHANG Y

Continuous graphene producing and transferring device, has peeling-off device provided with sticking film device and stripping device, and growth substrate recycling device connected with cleaning device and drying device.

JIN H, LIU Z, ZHOU Z, PENG P

Preparation of graphene and carbon nanotube composite material by plating mono-crystalline silicon substrate with titanium transition layer and cobalt catalyst layer, vacuumizing, heating, and supplying carbon and protective gases.

TIAN H, AN T, ZHENG W, DING Y, HU X

Film-forming apparatus for forming graphene film on film-forming target e.g. metallic foil, has roll-to-roll mechanism which provides tensile force relaxation unit that relaxes tensile force applied to transported film-forming target.

KOBAYASHI T, SHIMIZU K, KADONO K, MIZUGUCHI Y, MURAKAMI Y, MIZUKUCHI Y, SUMINO K

Producing graphene used in graphene-copper composite, involves providing copper substrate including first copper layer in contact with second copper layer and growing graphene monolayer on second copper layer by chemical vapor deposition.

ROBINSON J, YAGER T A

Preparation of graphene by washing cobalt-nickel alloy substrate in ethanol solution, adding ethylbenzene, cooling quartz furnace to room temperature, and subjecting sample to ultrasonic treatment.

LIN Y, WU J, ZHANG X