国家/地区 日本（9）
IPC部 B（9）
IPC大类 C23（9） B82（8） C01（7）
B32（5） H01（5） B05（4）
B01（2） C03（2） C30（2）
IPC小类 C23C（9） B82Y（8） C01B（7）
B32B（5） B05D（4） H01L（4）
B01J（2） C30B（2）
IPC C23C016/26（9）
发明人 BAE S K（2） CHUNG H（2） CHUNG H J（2）
HEO J（2） HEO J S（2） HUH J（2）
HUH J S（2） JUNG H（2） JUNG H J（2）
KANG S（2） KANG S R（2） SEO D（2）
SEO S（2） SEO S A（2） WOO Y（2）
公开年 2011（9）
申请年 2010（7） 
专利权人 SAMSUNG ELEC.（2） UNIV SUNGKYU.（2）

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K

Graphene roll-to-roll coating apparatus useful for graphene roll-to-roll coating, and for coating a metallic member, comprises a first roller, a pre-treating unit, a graphene forming unit, and a second roller.

BAE S K, CHOI J, HONG B H, KANG J, KIM H K, KIM Y J, YAN J K

Method of transferring larger-sized graphene used in electric circuit, involves removing adhesive and protection layers from graphene layer respectively.

BAE S, CHUNG H, HEO J, JUNG M, KANG S, SEO D, SEO S, WOO Y, BAE S K, CHUNG H J, HEO J S, JUNG M H, KANG S R, SEO S A, WOO Y S, JUNG H J, HUH J S, YEO R, HUH J, JUNG H

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H

Electrically activating a structure having graphene layers formed on a silicon carbide layer comprises subjecting the structure to an oxidation process.

MCFEELY F R, YURKAS J J, OIDA S, HANNON J B

Graphene film for composite complex contains several graphene domains each having specified area.

AGO HIROKI, ITO YOSHITO, TANAKA IZUMI, MIZUNO SEIGI, TSUJI MASAHARU, AGO H, ITO Y, TANAKA I, MIZUNO S, TSUJI M, MIZUNO K

Substrate for fabrication of semiconductor element, has graphene layer formed by chemical vapor deposition using metal catalyst, compound or alloying layer and oxide layer for diffusing metal catalyst sequentially formed on metal layer.

HIURA H, TSUKAGOSHI K

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Producing graphene, comprises introducing a solution of a metal alkoxide in a solvent into a decomposition apparatus, which includes a first region having a high temperature to cause thermal decomposition of the metal alkoxide.

COLEMAN K S