国家/地区 美国（22）
IPC部 C（22）
IPC大类 C23（22）
IPC小类 C23C（22） C01B（11） H01L（9）
B01J（2） C22C（2） C30B（2）
H01J（2） H01M（2）
IPC C23C016/26（22）
发明人 BYUN K（3） SHIN H（3） SHIN K（3）
BYUN K E（2） CHO Y（2） LEE C（2）
LEE E（2） LEE S（2） LI Y（2）
SHEN X（2） SHIN H J（2） SHIN K W（2）
SONG H（2）
公开年 2022（22）
申请年 2021（10）  2022（10）  2020（2） 
专利权人 SAMSUNG ELEC.（4） APPLIED MATE.（3）

Vacuum processing apparatus for removing oxidizing gas, comprises decompressable process container, supply port that is formed on side wall of process container and configured to supply, to process container, and apparatus also comprises ionic liquid that absorbs oxidizing gas.

HAYAKAWA T, UMESHITA N, AKIYAMA K, SEKIGUCHI K, ASAKO R, NAKANO T, ARYAL D, ROTONDARO A, IWASHITA M, IIZUKA Y, UEDA H

Conductor material, has metal matrix, first carbon allotrope distributed within metal matrix, where first carbon allotrope is aligned with direction of electric current flow through length of metal matrix, and metal matrix and first carbon allotrope have electrical interfacial coherency.

KRAFT F F

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Thermal material for changing apparent temperature of article, has electrode, film of reduced graphene oxide, porous membrane that is sandwiched between electrode and film of reduced graphene oxide, and ionic liquid that is disposed within pores of porous membrane.

NOVOSELOV K, ANDREEVABAEUMLER D, ANDREEABOYELLE D

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Producing graphene useful for electronic devices comprises forming graphene on non-metallic surface of substrate by chemical vapor deposition in reaction chamber and adding precursor in gas phase and suspended in gas into reaction chamber.

DIXON S, GRIFFITHS J, GRIFFIN R M, GUINEY I, THOMAS S

Acetylene fluid supply package for use in fabricating a semiconductor device, has pressure vessel, porous filler in the pressure vessel, improved solvent within the porous filler, where solvent solubilizing with acetylene absorbed within the improved solvent, improved solvent is triethyl phosphate.

HAN Y, CHUNG W, CHO Y, KANE W S, SONG X, SINHA A K, CHO Y J

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Making solar cell involves depositing multiple nanoparticles on surface of chemical vapor deposition substrate, heating substrate and nanoparticles at sub-atmospheric pressure, and contacting gaseous mixture comprising methane and hydrogen with nanoparticles.

ELSAYED K A M, MAAROUF A A

Manufacturing wrinkled graphene comprises immersing polymeric substrate, wrinkled graphene, polystyrene sulfonic acid, or polystyrene substrate in water to remove polystyrene substrate by dissolving polystyrene sulfonic acid substrate.

HONG S, NARUTE P, NARUTEPHRASANT