国家/地区 美国（19） 世界知识产权组织（14） 韩国（10） 中国（9） 日本（8） 欧洲专利局（EPO）（5） 新加坡（3） 土耳其（3） 德国（2） 英国（2） 香港（2） 台湾（2）
IPC部 C（20）
IPC大类 C23（20）
IPC小类 C23C（20） C01B（16） B82Y（11）
H01L（11） B32B（6） H01G（6）
H01B（5） C01G（2） C07C（2）
H01M（2）
IPC C23C016/26（20）
发明人 GUO S（3） OZKAN C S（3） OZKAN M（3）
LEE J（2） OEZYILMAZ B（2） OZYILMAZ B（2）
WANG W（2）
公开年 2014（8） 2013（7） 2015（5）
申请年 2013（20）
专利权人 UNIV CALIFOR.（3） EMPIRE TECHN.（2） GUO S（2） KOREA ADVANC.（2）
OZKAN C S（2） OZKAN M（2） SAMSUNG ELEC.（2） UNIV SINGAPO.（2）
WANG W（2）

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Energy device used in supercapacitor application, comprises porous metal substrate, graphene layer deposited onto surface of porous metal substrate, carbon nanotubes, and metal oxide nanostructures.

WANG W, GUO S, OZKAN C S, OZKAN M

Production of uniformly-doped large area multi-layered graphene element used for display/screen of electric/electronic device, involves forming openings in graphene sheet, and holding graphene element and dopant at elevated temperature.

RUSSO S, CRACIUN M, BOINTON T H

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Graphene wiring for semiconductor device comprises substrate, catalyst layer on substrate, graphene layer on catalyst layer, and dopant layer which contains atom or molecule in side surface of graphene layer.

MIYAZAKI H, SAKAI T, KATAGIRI M, YAMAZAKI Y, SAKUMA H, SUZUKI M, SAKUMA N

Preparing carbon nanotube-graphene composite, comprises inserting carbon nanotube chemical vapor deposition catalyst between stacked graphene sheets, heating nanotube chemical vapor deposition catalyst, growing and cooling carbon nanotubes.

HE P

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K

Graphene composite electrode material preparation method, involves providing glass substrate, forming metal thin film on glass substrate, and patterning metal thin film to form circuit image.

WANG Y