国家/地区 中国（13） 美国（4） 台湾（3）
IPC部 C（15）
IPC大类 C23（15）
IPC小类 C23C（15） C01B（5） H01L（3）
B82Y（2） C22C（2）
IPC C23C016/26（15）
发明人 WANG J（15）
公开年 2022（4） 2014（2） 2016（2） 2018（2）
申请年 2014（3）  2022（3）  2016（2）  2017（2）  2020（2）  2021（2） 
专利权人 APPLIED MATE.（2） CHINESE ACAD.（2） HON HAI PREC.（2） HONGFUJIN PR.（2）
INST SEMICON.（2） UNIV TSINGHU.（2）

Processing semiconductor for producing high quality devices and structures, involves delivering carbon-containing precursor and hydrogen-containing precursor to processing region of semiconductor processing chamber, forming layer of graphene on substrate positioned in processing region of chamber.

INGLE N K, MALLICK A B, SINGHA R S, WANG J

Titanium carbide-yttrium oxide composite reinforced graphene-coated copper-based contact material comprises titanium carbide, yttrium oxide, tungsten, chromium, molybdenum, and graphene-coated copper.

LIU J, ZHANG Y, CHEN H, YU X, TAO Y, WANG J

Preparing flexible strain sensor based on vertical graphite comprises adding flexible substrate fluorocrystalline mica sheet into magnetron sputtering apparatus, adding prepared interdigital electrode substrate, passing methane/hydrogen/argon mixed gas and excapsulating with polydimethylsiloxane.

ZHANG J, WANG J, ZHANG L, LUO K, WANG Q

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Method for improving graphene performance by wet soaking and low-temperature annealing, involves removing poly methyl methacrylate photo-resist remaining on graphene during transfer process by annealing in low-pressure and low-temperature atmosphere.

LI M, ZHENG S, WANG J

Multi-chamber semiconductor thin film epitaxy device comprises growth chambers and mechanical arm, where growth chambers have graphene and semiconductor material growth chamber, where graphene growth chamber used to grow graphene film.

GUO L, WEI T, RAN J, WANG J

Graphene-sensitized optical fiber lactic acid sensor for detection of lactic acid concentration comprises optical fiber and nickel plating layer, where graphene layer is grown at polishing area of optical fiber after melting and tapering.

ZHANG J, YUAN G, LI Z, WANG J, ZHOU Y

Manufacturing artificial graphite involves placing graphene film on surface of base, placing graphene film/base composite structure in reaction chamber and graphitizing carbon layer/graphene film/base composite structure in inert gas.

LIU P, ZHAO W, WANG J, JIANG K, FAN S

Preparation of large-area double-layer graphene film on insulating substrate, involves placing composite substrate containing copper tube into reactor, introducing gas mixture of argon and hydrogen, heating, and adding gaseous carbon source.

SUN H, GAO Y, ZHANG C, WANG Z, WANG Q, XU J, WANG J

High conductivity composite metal material comprises matrix and graphene layers.

RUI D, SUN Y, WANG J