国家/地区 韩国（7） 美国（7） 世界知识产权组织（5） 中国（4） 欧洲专利局（EPO）（4） 日本（3） 土耳其（2） 台湾（2）
IPC部 C（9） B（5） H（5）
IPC大类 C01（9） C23（9） H01（5）
B82（4）
IPC小类 C01B（9）
IPC C23C016/26（9）
发明人 GUO S（2） OZKAN C S（2） OZKAN M（2）
WANG W（2）
公开年 2015（9）
申请年 2013（9）
专利权人 GUO S（2） OZKAN C S（2） OZKAN M（2） UNIV CALIFOR.（2）
WANG W（2）

Doping graphene, comprises preparing dispersed solution of the molecules having molecular structure linearly connected with two aromatic rings, applying the obtained solution on graphene, and drying the solution.

MOON J, HONG B, PARK S, JUNG M, CHOI M

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Energy device used in supercapacitor application, comprises porous metal substrate, graphene layer deposited onto surface of porous metal substrate, carbon nanotubes, and metal oxide nanostructures.

WANG W, GUO S, OZKAN C S, OZKAN M

Producing graphene layer from liquid metal matrix on solid metal or ceramic substrate of multilayered plate containing e.g. graphene forming matrix, comprises heating, annealing and supplying acetylene, ethylene and hydrogen and cooling.

MODRZYK W, KULA P, RZEPKOWSKI A, PIETRASIK R, ATRASZKIEWICZ R, DYBOWSKI K

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Production of uniformly-doped large area multi-layered graphene element used for display/screen of electric/electronic device, involves forming openings in graphene sheet, and holding graphene element and dopant at elevated temperature.

RUSSO S, CRACIUN M, BOINTON T H

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S

Manufacture of single crystal graphene film involves melting catalyst layer on substrate, cooling molten catalyst, forming catalyst region, and expanding catalyst region to expand cooling area of catalyst layer.

HAN I T, KIM H J, KIM S G, KIM Y C, LEE J H, YOO J B