国家/地区 美国（8）
IPC部 C（8）
IPC大类 C01（8） C23（8） H01（4）
IPC小类 C01B（8）
IPC C23C016/26（8）
发明人 AHN S J（2） AN S（2） BYUN K（2）
BYUN K E（2） KIM C（2） LEE C（2）
LEE C S（2） SHIN H（2） SHIN H J（2）
SHIN K（2） SHIN K W（2）
公开年 2020（4） 2019（3）
申请年 2019（8）
专利权人 SAMSUNG ELEC.（2）

Depositing layer of carbon nanostructures on substrate by providing substrate in processing chamber, providing processing gas in processing chamber having carbon monoxide gas and creating and sustaining gaseous plasma in processing chamber.

ZAPLOTNIK R, MOZETIC M, PRIMC G, VESEL A, HORI M, ODA O

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Method for manufacturing multilayer graphene, involves subjecting graphene precursor to chemical vapor deposition on metal substrate containing nonmetal element, manufacturing graphene that is doped with element on metal substrate.

CHO K, YOO M S, LEE H C, CHO K W, ZHAO J, YU M, LI X

Formation of vertical graphene nanostripes used for supercapacitor, involves providing substrate in processing chamber, generating plasma, exposing substrate, and growing graphene nanostripes having preset aspect ratio of length to width.

YEH N, HSU C

Directly growing of carbon material in production of high-quality graphene, involves adsorbing carbons onto substrate by supplying carbons to substrate, and removing unreacted carbon residues from substrate after supplying carbons.

KIM C, SHIN H, BYUN K, SHIN K, LEE C, NAM S, AN S, LEE J, CHO Y, SHIN H J, BYUN K E, SHIN K W, LEE C S, NAM S G, AHN S J, LEE J H, LEE J I, CHO Y C

Composition comprises discrete nanostructures of functionalized graphene layer and core species bound to the graphene layer and core species reversibly covalently binds first portion of the layer to a second portion of the graphene layer.

HUNTER I W, SWAGER T M, JEON I, PARK G H, WANG P

Graphene nanoribbon precursor for use in graphene nanoribbon that is utilized in electronic device for channel of FET and resonant tunneling diode, comprises substituted terphenyl compound.

YAMAGUCHI J

Continuously preparing film comprising graphene by continuously advancing metal substrate into and through processing chamber, heating to form molten metal layer, contacting molten metal layer with carbon source gas, and solidifying.

HARUTYUNYAN A