国家/地区 美国（12）
IPC部 B（12）
IPC大类 C01（12） C23（12） B01（6）
B82（6） H01（6） B32（2）
G09（2）
IPC小类 C01B（12）
IPC C23C016/26（12）
发明人 CHOI J（2） JUNG M（2） LEE Y（2）
MOON J（2）
公开年 2014（12）
申请年 2013（8）  2014（3） 
专利权人 LG ELECTRONI.（2） SAMSUNG ELEC.（2） SHENZHEN CHI.（2）

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Preparing carbon nanotube-graphene composite, comprises inserting carbon nanotube chemical vapor deposition catalyst between stacked graphene sheets, heating nanotube chemical vapor deposition catalyst, growing and cooling carbon nanotubes.

HE P

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K

Graphene synthesizer used for synthesizing graphene, comprises heater unit for applying heat to continuous catalytic metal thin film, susceptor unit arranged between catalytic metal thin film and heater, and source material supply unit.

YOON J, YOON J H

Graphene composite electrode material preparation method, involves providing glass substrate, forming metal thin film on glass substrate, and patterning metal thin film to form circuit image.

WANG Y

Manufacturing method of graphene device e.g. FET , nanogap device, graphene sensor involves etching protection layer until residual layer made of material for forming protection layer remains on active area of graphene layer.

LEE J, JEON T, KIM Y, LEE C, JUNG Y, LEE J H, JEON T H, KIM Y S, LEE C S, JUNG Y S

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J

Making graphene laminate used in e.g. LCD, comprises forming graphene on graphitization catalyst film, coating surface of substrate with binder layer composition, contacting composition and graphene, curing composition, and removing film.

SHIN H, CHOI J, HAN G, LEE Y