国家/地区 美国（8）
IPC部 C（8）
IPC大类 C01（8） C23（8） H01（3）
B01（2） G02（2）
IPC小类 C01B（8）
IPC C23C016/26（8）
发明人
公开年 2018（4） 2020（3）
申请年 2018（8）
专利权人

Synthesizing graphene pattern by physically adhering catalyst block including catalyst material to portion of growth substrate, and forming graphene thin film selectively at interface between catalyst block and growth substrate.

PARK J, SIM Y, KIM J, SIM Y M, PARKJAEHYUN

Formation of nanocrystalline graphene used for semiconductor device, involves arranging substrate in chamber, forming protective layer, injecting reaction gas, generating plasma, and growing nanocrystalline graphene on protective layer.

JUNG A, SHIN K, BYUN K, SHIN H, LIM H, NAM S, SONG H, CHO Y, JUNG A R, SHIN K W, BYUN K E, SHIN H J, LIM H S, NAM S G, SONG H J, CHO Y C

Ophthalmic lens used in spectacle lens, comprises organic substrate having front main face and rear main face, and multilayered interferential coating comprising layer based on graphene, which is coated on front main and rear main faces.

FEUILLADE M, MAURY H

Transparent electrode used in solar cell, comprises transparent substrate, and composite layer comprising graphene layer and nanoparticles which are embedded in graphene layer, placed on transparent substrate.

MAAROUF A A, ELSAYED K A M

Synthesis of graphene for optoelectronic devices, involves placing copper-nickel thin film laminate in chemical vapor deposition, bringing graphene precursor into contact with thin film laminate, and performing chemical vapor deposition.

CHO K, YOO M S, LEE H C, CHO K W

Method for generating graphene film, involves placing substrate for graphene film synthesis inside of quasi-enclosed substrate holder and generating graphene film on substrate through chemical vapor deposition.

BOL A A, LI X

Graphene-manufacturing apparatus includes reaction chamber defining reaction space, mold unit including mold body and outer surface, and driving unit connected to mold unit.

HUANG K, HUANG G

Method for doping synthesized graphene by high temperature heat treatment in gas atmosphere containing dopant,.

HAM M H, SON M W, MYUNGWOO S