国家/地区 美国（60）
IPC部 B（60）
IPC大类 B32（60）
IPC小类 B32B（60）
IPC C23C016/26（60）
发明人 CHOI J（7） HONG B H（5） FAN S（4）
JIANG K（4） LIN X（4） SHIN H（4）
AHN J（3） CHOI J Y（3） FAN F Y（3）
LEE S（3） SHIN H J（3） WOO Y S（3）
XIAO L（3） YOON S（3） YOON S M（3）
公开年 2013（17） 2012（16） 2016（7） 2011（5） 2009（4） 2010（2） 2014（2） 2015（2） 2017（2） 2021（2）
申请年 2012（18）  2011（14）  2013（7）  2009（4）  2015（4）  2008（3）  2014（3）  2016（3） 
专利权人 SAMSUNG ELEC.（6） GRAPHENE SQU.（4） HON HAI PREC.（4） HONGFUJIN PR.（4）
UNIV TSINGHU.（4） UNIV SUNGKYU.（3） CENT NAT REC.（2） CHOI J（2）
CORNING INC（2） HEIQ MATERIA.（2） HONG B H（2） INT BUSINESS.（2）
KOREA INST S.（2） MASSACHUSETT.（2） TE CONNECTIV.（2） TYCO ELECTRO.（2）
UNIV KENTUCK.（2） UTBATTELLE L.（2）

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Transferring graphene involves forming graphene on first substrate, forming polymer precursor mixture on second substrate, providing graphene oppositely to second substrate having polymer precursor mixture.

GU T J, JANG W, SEO Y, WHANG D, WHANG D M, SEO Y M, JANG W S

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Method for transferring graphene film to substrate, involves contacting exposed graphene surface with target substrate formed by removing growth substrate that is contacted by second surface of graphene film.

JOHNSON B Y, LIU X, MAZUMDER P

Graphene film manufacturing device comprises wrinkles flattening device, base substrate, graphene film, porous adsorption member, hollow space and vacuum suction port.

WAN S K, HEE H J, HEE H B, KIM W S, HAN J H, HONG B H

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Method for preparing graphene conductive film for flexible touch device, involves growing graphene layer on metal-catalyzed base, and coating polyamic acid solution layer on graphene layer, where polyimide film is formed by thermal curing.

DI Y

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Susceptor has first fluoro polymer layer that is arranged on first surface of susceptor portion, and graphene layer is arranged on first fluoro polymer layer.

VISSER R J, JEONG S, DODABALAPUR A