国家/地区 日本（72）
IPC部 B（72）
IPC大类 C01（72）
IPC小类 C01B（72）
IPC C23C016/26（72）
发明人 FAN F Y（5） FAN S（5） JIANG K（5）
LIN X（5） XIAO L（5） LIN X Y（4）
MATSUMOTO T（4） IFUKU R（3） WOO Y S（3）
BAE S（2） BAE S K（2） BEDWORTH P V（2）
CHOE P（2） CHOI B（2） CHOI B L（2）
公开年 2013（14） 2012（11） 2015（10） 2017（9） 2011（7） 2016（7） 2018（3） 2009（2） 2010（2） 2014（2） 2021（2）
申请年 2011（12）  2012（10）  2013（8）  2014（8）  2016（7）  2010（6）  2015（6）  2017（5）  2008（2）  2009（2）  2019（2）  2020（2） 
专利权人 HON HAI PREC.（5） HONGFUJIN PR.（5） SAMSUNG ELEC.（5） UNIV TSINGHU.（5）
TOKYO ELECTR.（4） DOKURITSU GY.（3） UNIV CALIFOR.（3） UNIV SUNGKYU.（3）
BASF SE（2） CENT NAT REC.（2） COMMISSARIAT.（2） COMMISSARIAT.（2）
CORNING INC（2） FUJITSU LTD（2） GRAPHENE SQU.（2） GUO S（2）
HEIQ MATERIA.（2） LOCKHEED MAR.（2） MAX PLANCK G.（2） NAT INST ADV.（2）

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Preparing gas selective separation filter involves providing graphene membrane on sacrificial support layer, subjecting graphene membrane to transient pressurized ozone gas pulse, purging ozone, and cooling down ozone treated graphene membrane.

AGRAWAL K V, HUANG S, HSU K, AGRAWAL K, HWANG S, HUSH K, XU G

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Detecting abnormal growth of graphene by preparing inspected object having graphene film formed by chemical vapor deposition on substrate, using dark-field optical system to receive light from film and detecting abnormal growth of graphene.

IFUKU R, MATSUMOTO T, FUJIO A, SAITO K, RYOTA I, TAKASHI M, AKIRA F, KOUSAKU S

Graphene nanoribbon precursor for use in graphene nanoribbon that is utilized in electronic device for channel of FET and resonant tunneling diode, comprises substituted terphenyl compound.

YAMAGUCHI J

Graphene-manufacturing apparatus includes reaction chamber defining reaction space, mold unit including mold body and outer surface, and driving unit connected to mold unit.

HUANG K, HUANG G

Wiring for semiconductor device, includes first metal portion, multilayer graphene, and second metal portion which are interposed between conductive portions.

KATAGIRI M, SAITO T, SAKAI T, MIYAZAKI H

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H