国家/地区 美国（21） 韩国（15） 世界知识产权组织（15） 日本（13） 中国（11） 欧洲专利局（EPO）（5） 台湾（3）
IPC部 C（29）
IPC大类 C01（29）
IPC小类 C01B（29）
IPC C23C016/26（29）
发明人 HONG B H（4） FAN F Y（3） FAN S（3）
HONG B（3） JIANG K（3） LEE K（3）
LIN X（3） LIN X Y（3） XIAO L（3）
AHN J（2） AHN J H（2） AN K S（2）
BAE S（2） BAE S K（2） CHOE P（2）
公开年 2012（29）
申请年 2011（16）  2012（10）  2010（3） 
专利权人 KOREA ADV IN.（4） HON HAI PREC.（3） HONGFUJIN PR.（3） SAMSUNG ELEC.（3）
UNIV SUNGKYU.（3） UNIV TSINGHU.（3） EMPIRE TECHN.（2） GRAPHENE SQU.（2）
HANWHA TECHW.（2） ISLAND GIANT.（2） KOREA ADVANC.（2） KOREA RES IN.（2）
SAMSUNG TECH.（2） UNIV SUNGKYU.（2）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Making graphene/carbon nanotube composite structure, comprises growing graphene film on surface of metal substrate by chemical vapor deposition method, cooling metal substrate, and providing carbon nanotube film structure on graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene or carbon nanotube composite structure, comprises e.g. growing graphene film on first surface of metal substrate by chemical vapor deposition method, and combining carbon nanotube film structure with graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene composite structure used as electrode involves growing a graphene film on the first surface of the metal substrate by a chemical vapor deposition method; and etching the metal substrate from the second surface.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Manufacture of graphene used for e.g. graphene conducting wire, for semiconductor device e.g. memory, involves controlling electrical characteristics by doping nitrogen to graphene.

LEE S S, JUNG M W, PARK B K, JEONG S J, LEE Y K, CHUNG T M, KIM C G, AN K S, SHIN Y S, JUNG D

Manufacture of graphene for e.g. touch screen, involves loading substrate having catalyst layer into chamber, evaporating, supplying carbon source gas, heating in primary portion of catalyst layer, dissolving carbon component, and cooling.

JEON S, LEE J, OH S, RAN O S, SEOP L J, U JEON S, JIN S L, SE R O, SEOK W J

Making doped single graphene sheets involves oxidizing graphite to non-electrically conductive graphite oxide followed by exfoliating in solvent, depositing metal or metal oxides, and reducing to electrically conductive graphene sheets.

DO I, DRZAL L T, MONGA A

Electronic device e.g. transistor, has insulating layer having space, formed on substrate, and graphene crosslinked between pair of electrodes formed on both sides of space, through space top.

SATO S

Forming multi-layer graphene involves forming stack of graphitizing metal catalyst layer and graphene by repeatedly forming the catalyst layer on substrate, and forming graphene on the catalyst layer; and removing the metal catalyst layer.

WOO Y, CHOI J, CHOI W, SHIN H, YOON S, WOO Y S, CHOI J Y, CHOI W M, SHIN H J, YOON S M