国家/地区 欧洲专利局（EPO）（7）
IPC部 B（7）
IPC大类 C01（7） C23（7） B82（6）
B32（4） H01（3） H05（3）
IPC小类 C01B（7）
IPC C23C016/26（7）
发明人
公开年 2013（5） 2012（2）
申请年 2012（7）
专利权人

Preparation of graphene paper involves introducing protective gas into reaction chamber having clean substrate, heating substrate, continuously introducing carbonaceous material and cooling to obtain graphene paper on substrate surface.

WANG Y, YUAN X, ZHOU M

Manufacturing electrical conductor, comprises providing substrate layer, depositing surface layer on substrate layer, and depositing graphene layer on substrate layer.

SULLIVAN M M E, HILTY R D, MARTENS R I, ZHENG M, HEMOND J H B, LIU Z, SULLIVAN MALERVY M E, SULLIVAN MALERVY M, HILTY R, MARTENS R, HEMOND J, SULLIVANMALERVY M E

Method for manufacturing laminate of graphene to produce e.g. electronic device product, involves providing target substrate to form first composite comprising target substrate, and removing of first composite from growth substrate.

HAQUE S M, WHITE R, BOWER C, HAQUE S

Copper foil for manufacturing graphene, has specified arithmetic mean roughness in rolling parallel direction and rolling perpendicular direction.

CHIBA YOSHIHIRO, CHIBA Y, CHIBA G, YOSHIHIRO C

Making graphene film comprises providing copper foil, placing foil in microwave plasma chemical vapor deposition chamber, evacuating chamber, providing hydrogen gas to chamber, exposing foil to plasma, and providing methane gas to chamber.

FISHER T S, KUMAR A

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H