国家/地区 欧洲专利局（EPO）（9）
IPC部 B（9）
IPC大类 C01（9） C23（9） B82（5）
H01（5） C30（4） B05（2）
B32（2） C04（2）
IPC小类 C01B（9）
IPC C23C016/26（9）
发明人 MUELLEN K（2） SACHDEV H（2） SCHWAB M G（2）
公开年 2015（9）
申请年 2014（4）  2013（3）  2015（2） 
专利权人 BASF SE（2） MAX PLANCK G.（2）

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Method for forming workpiece of e.g. electronic device, involves removing layer of material on top of graphene surface in predetermined pattern, and releasing graphene from catalytic film such that graphene is in form of patterned layer.

JOHNSON A T, GUDIBANDE R R, QI Z J, JOHNSON A, GUDIBANDE R, QI Z

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Production of uniformly-doped large area multi-layered graphene element used for display/screen of electric/electronic device, involves forming openings in graphene sheet, and holding graphene element and dopant at elevated temperature.

RUSSO S, CRACIUN M, BOINTON T H

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Coated article comprises a low temperature component and a graphene coating formed from applying the graphene derivative over the low temperature component.

KALAGA M K, BHATTACHARYYA A, DEVI R M, SCHAEFFER J C, PARAKALA P, PABLA S S, SHEFFIELD J C, PALAKARA P, PABRA S S, CARAGA M K, DEVIE R M