国家/地区 韩国（20）
IPC部 C（20）
IPC大类 C01（20） C23（20） H01（10）
B82（9） B01（3） B32（3）
C07（2） C30（2）
IPC小类 C01B（20）
IPC C23C016/26（20）
发明人 GUO S（2） HONG B（2） JUNG M（2）
KIM T（2） LEE J（2） LEE J H（2）
LEE J S（2） MOON J（2） OZKAN C S（2）
OZKAN M（2） PARK S（2） WANG W（2）
公开年 2013（7） 2015（7） 2014（6）
申请年 2013（20）
专利权人 KOREA ADVANC.（3） GUO S（2） LG ELECTRONI.（2） OZKAN C S（2）
OZKAN M（2） SAMSUNG ELEC.（2） UNIV CALIFOR.（2） WANG W（2）

Doping graphene, comprises preparing dispersed solution of the molecules having molecular structure linearly connected with two aromatic rings, applying the obtained solution on graphene, and drying the solution.

MOON J, HONG B, PARK S, JUNG M, CHOI M

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Energy device used in supercapacitor application, comprises porous metal substrate, graphene layer deposited onto surface of porous metal substrate, carbon nanotubes, and metal oxide nanostructures.

WANG W, GUO S, OZKAN C S, OZKAN M

Production of uniformly-doped large area multi-layered graphene element used for display/screen of electric/electronic device, involves forming openings in graphene sheet, and holding graphene element and dopant at elevated temperature.

RUSSO S, CRACIUN M, BOINTON T H

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S

Manufacture of single crystal graphene film involves melting catalyst layer on substrate, cooling molten catalyst, forming catalyst region, and expanding catalyst region to expand cooling area of catalyst layer.

HAN I T, KIM H J, KIM S G, KIM Y C, LEE J H, YOO J B

Graphene growth method involves sequentially forming conductor layer, insulating layer, carbon layer and semiconductor layer, applying voltage between semiconductor layer and conductive layer, heating, and growing carbon layer.

CHOI J W

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Hydrophobic nano-graphene laminate used as graphene device e.g. graphene electrode, comprises trifluoromethyl-functionalized hollow spherical material with diameter of preset range, and has thickness and contact angle of preset range.

JANG J H, LEE J S