国家/地区 世界知识产权组织（17）
IPC部 B（17）
IPC大类 C01（17） C23（17） B82（13）
H01（9） B32（8） B01（6）
C30（3） B05（2）
IPC小类 C01B（17）
IPC C23C016/26（17）
发明人 HONG B H（3） KIM H（3） AHN J（2）
AHN J H（2） DING G（2） HONG B（2）
LEE K（2） LEE S（2） XIE X（2）
公开年 2012（17）
申请年 2012（9）  2011（8） 
专利权人 HANWHA TECHW.（3） SAMSUNG TECH.（3） CHINESE ACAD.（2） GRAPHENE SQU.（2）
KOREA ADV IN.（2） SHANGHAI INS.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Manufacture of graphene for e.g. touch screen, involves loading substrate having catalyst layer into chamber, evaporating, supplying carbon source gas, heating in primary portion of catalyst layer, dissolving carbon component, and cooling.

JEON S, LEE J, OH S, RAN O S, SEOP L J, U JEON S, JIN S L, SE R O, SEOK W J

Making doped single graphene sheets involves oxidizing graphite to non-electrically conductive graphite oxide followed by exfoliating in solvent, depositing metal or metal oxides, and reducing to electrically conductive graphene sheets.

DO I, DRZAL L T, MONGA A

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Patterning graphene involves forming passivation material pattern on growth substrate, defining inverse pattern of exposed surface that facilitates graphene growth; and supplying carbon-containing gas to pattern to form patterned graphene.

HOFMANN M, KONG J

Apparatus for manufacturing graphene film, has heater that is provided to heat domain of catalyst substrate which is arranged to contact gas gushing out from gas jet unit.

YOON J, HYEOK Y J, YOON J H

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Graphene transferring method, involves adhering heat exfoliation sheet with target substrate, and pressurizing heat exfoliation sheet pressurized with graphene according to atmospheric condition.

HONG B H, CHOI J, KIM Y, KIM K S, KANG J, KIM H, CHOI J B

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y