国家/地区 韩国（7） 美国（6） 中国（2） 日本（2） 世界知识产权组织（2）
IPC部 B（7）
IPC大类 B01（7）
IPC小类 B01J（7）
IPC C23C016/26（7）
发明人
公开年 2012（2） 2013（2）
申请年 2012（3） 
专利权人 HANWHA AEROS.（2） HANWHA TECHW.（2） SAMSUNG ELEC.（2） SAMSUNG TECH.（2）

Graphene forming apparatus has gas supply unit which is placed in side of laser generator for spraying sealed gas on amorphous carbon layer.

KI H S, LEE K H

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Graphene dot structure to form network, useful to form electrode or conductive layer in lithium ion battery or hydrogen storage apparatus comprises core of semiconductor material, and shell of graphene formed on surface of core.

LEE E, CHOI B, LEE J, WHANG D, CHOI B L, LEE E K, LEE J H, WHANG D M

Manufacture of graphene for, e.g. organic LEDs, involves preparing structure with graphene on surfaces and catalyst, arranging carriers on graphene, and removing catalyst while winding up carriers by rotating rolls facing each other.

KIM N, RYU J, YEONG K N, CHEOL R J, KIM N Y, RYU J C

Graphene synthesis chamber for synthesizing graphene comprises chamber case in which substrate comprising metal thin film, gas supply unit, main heating unit which emits light to inner space to heat substrate; and auxiliary heating unit.

WON D, NAM W, WON D K, NAM W S

Forming graphene, comprises providing substrate and carbon-containing reactant source in chamber, and radiating laser beam on substrate to decompose carbon-containing reactant source and form graphene over substrate.

LEE K, CHOI I, CHOI S, HONG B, LEE K J, CHOI I S, CHOI S Y, HONG B H

Preparing graphene sheet, useful in e.g. electrical device, comprises forming film comprising graphitizing catalyst, heat-treating gaseous carbon source in presence of the catalyst to form graphene, and cooling graphene to form sheet.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, IN Z