国家/地区 韩国（13） 美国（13） 世界知识产权组织（8） 日本（6） 中国（5） 欧洲专利局（EPO）（3） 台湾（3）
IPC部 C（19）
IPC大类 C23（19）
IPC小类 C23C（19） C01B（14） H01L（14）
B82Y（8） B32B（7） B05D（5）
H01B（5） B82B（3） C03C（2）
C30B（2）
IPC C23C016/26（19）
发明人 BAE S K（3） HONG B H（3） BAE S（2）
CHOI J（2） KANG J（2） KIM H K（2）
KIM Y J（2） SEO D（2）
公开年 2011（19）
申请年 2010（10）  2011（6）  2009（3） 
专利权人 UNIV SUNGKYU.（5） SAMSUNG ELEC.（3） GRAPHENE SQU.（2） UNIV SUNGKYU.（2）

Method for depositing graphene on substrate for semiconductor device, involves heating substrate in chemical vapor deposition chamber and flowing carbon precursor into chamber.

PADHI D, JANZEN J, SHAIKH S, KIM B, CHIN B, KIM B H

Method for manufacturing graphene thin film of capacitor, involves manufacturing precursor solution, dispersing graphite oxide powder into solvent, and forming graphene thin film by generation of static attraction.

KIM K B, HEECHANG Y, SEONG M B, BEOM K G, CHANG Y H, MIN P S

Formation of graphene used for semiconductor device, solar cell and flat panel display device, involves introducing carbon-type gas to surface vicinity of base material and heat processing surface of base material.

NAKASHIMA S, KATO S, UEHARA T, NAKANISHI K, MATSUMOTO M, FUKIDOME H, SUEMITSU M

Method of manufacturing graphene used for electronic device, involves forming graphene directly on germanium layer by supplying carbon-containing gas into chamber in which substrate is located.

LEE E, CHOI B, WHANG D, LEE J, CHOI B L, LEE E K, LEE J H, WHANG D M

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U

Method for preparing graphene FET, involves generating photoconduction effect in radiation of infrared ray by graphene channel layer.

ZHOU P, ZHANG W, WU D, SUN Q

Electromagnetic interference shielding method for electronic/electrical machinery and apparatus e.g. TV, involves forming graphene on outer side portion or inner side portion of graphene growth supporter by using chemical deposition process.

BAE S K, CHOI J, HONG B H, KANG J, KIM H K, KIM Y J, BUNG C J, GANG B S, GEUN K H, HUI H B, JIN K Y, MO G J, BAE S, KIM H

Graphene manufacturing device for forming graphene thin film on silicon wafer, has substrate lifting unit for ascending and descending substrate, and gas supply part for supplying carbon source and purging gas to vacuum chamber.

CHOI K J, WOONG C S

Graphene roll-to-roll coating apparatus useful for graphene roll-to-roll coating, and for coating a metallic member, comprises a first roller, a pre-treating unit, a graphene forming unit, and a second roller.

BAE S K, CHOI J, HONG B H, KANG J, KIM H K, KIM Y J, YAN J K

Manufacturing graphene sheet used as electrode material, involves growing graphene sheet on graphene growth support by applying carbon sources and heat; and forming ripple on the sheet by cooling the graphene growth support and sheet.

AHN J, HONG B, KIM K, AHN J H, HONG B H, KIM K S