国家/地区 中国（19）
IPC部 C（19）
IPC大类 C23（19）
IPC小类 C23C（19） C01B（10） B82Y（6）
H01L（5） B05D（4） B32B（4）
C30B（3） B01J（2） C25D（2）
IPC C23C016/26（19）
发明人 LIU J（3） RAO Z（3） XIA Y（3）
CHUNG H（2） CHUNG H J（2） HEO J（2）
HEO J S（2） HUH J（2） HUH J S（2）
JUNG H（2） JUNG H J（2） KANG S（2）
KANG S R（2） SEO D（2） SEO S（2）
公开年 2011（19）
申请年 2010（10）  2011（8） 
专利权人 INST MICROEL.（3） JIAXING MICR.（3） SAMSUNG ELEC.（2）

Method of growing graphene directly on substrate involves placing substrate material into plasma-enriched chemical vapor phase deposition cavity, vacuumizing, heating substrate, and supplying carbureted hydrogen gas and other inert gas.

SHI D, ZHANG G, ZHANG L

Method for preparing single-layer and multi-layer graphene from chemical gas phase deposition, involves pouring carbon gas to vacuum cavity and maintaining flow rate of hydrogen gas, and obtaining metal substrate deposited with graphene.

QU Y

Preparation of graphene film involves obtaining electroplated copper substrate, growing graphene on substrate by heating under normal pressure by chemical vapor deposition using methane and mixed gas of argon and hydrogen and cooling.

LI T, WANG W, WANG Y, ZHOU Y

Preparation of graphene material involves plating nickel membrane on substrate, adjusting optical path and parameter of laser, introducing argon gas and hydrogen gas, opening the laser, and introducing methane as reaction precursor source.

FANG F, WANG X, CUI Y, WANG F, LI J, WEI Z, FANG X, LUO T

Preparation of sulfur-doped graphene thin film by heating and preprocessing metal substrate in atmosphere of reduction protective gas, vacuuming container, and introducing mixed liquid of carbon source and sulfur source.

GAO H

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U

Polycrystalline graphene film useful as a flexible transparent conductive film in the organic electroluminescence display, electromechanical storage, organic solar battery and photoelectric functional device.

WANG L, ZHANG X, DU X

Method for preparing graphene FET, involves generating photoconduction effect in radiation of infrared ray by graphene channel layer.

ZHOU P, ZHANG W, WU D, SUN Q

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K

Method of transferring larger-sized graphene used in electric circuit, involves removing adhesive and protection layers from graphene layer respectively.

BAE S, CHUNG H, HEO J, JUNG M, KANG S, SEO D, SEO S, WOO Y, BAE S K, CHUNG H J, HEO J S, JUNG M H, KANG S R, SEO S A, WOO Y S, JUNG H J, HUH J S, YEO R, HUH J, JUNG H