国家/地区 日本（15）
IPC部 B（15）
IPC大类 C23（15） C01（14） B82（10）
H01（9） B32（8） H05（3）
B01（2）
IPC小类 C23C（15） C01B（14） B82Y（10）
B32B（8） H01L（6） H01B（5）
B01J（2） H05K（2）
IPC C23C016/26（15）
发明人 KADONO K（2） KOBAYASHI T（2） MARTENS R I（2）
SHIMIZU K（2） SUMINO K（2）
公开年 2013（15）
申请年 2012（8）  2013（5）  2011（2） 
专利权人 SONY CORP（2） TE CONNECTIV.（2） TOSHIBA KK（2） TYCO ELECTRO.（2）

Film-forming apparatus for forming graphene film on film-forming target e.g. metallic foil, has roll-to-roll mechanism which provides tensile force relaxation unit that relaxes tensile force applied to transported film-forming target.

KOBAYASHI T, SHIMIZU K, KADONO K, MIZUGUCHI Y, MURAKAMI Y, MIZUKUCHI Y, SUMINO K

Preparation of graphene paper involves introducing protective gas into reaction chamber having clean substrate, heating substrate, continuously introducing carbonaceous material and cooling to obtain graphene paper on substrate surface.

WANG Y, YUAN X, ZHOU M

Manufacturing electrical conductor used in e.g. cables and printed circuit boards involves providing base substrate; providing foil; depositing graphene layer on foil to define layered structure; and depositing structure on base substrate.

MARTENS R I

Formation method for transparent conductive film, involves forming transparent conductive film comprising sheet-like graphene, by sintering coated graphene ink to base-material surface at predetermined temperature.

TAKEI H, SAKIO S, SATO M, HIRAOKA K, IKEDA S, SAKAO Y, OTAKE F

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Manufacturing method of semiconductor device, involves forming graphene layer on catalyst layer after planarizing exposed surface of catalyst layer by oxidation-treating.

YAMAZAKI Y, KATAGIRI M, SAKAI T, SAKUMA H, KITAMURA M, SAKATA A, WADA M, KAJITA A, MIZUSHIMA I, SAKUMA N

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Manufacturing electrical conductor, comprises providing substrate layer, depositing surface layer on substrate layer, and depositing graphene layer on substrate layer.

SULLIVAN M M E, HILTY R D, MARTENS R I, ZHENG M, HEMOND J H B, LIU Z, SULLIVAN MALERVY M E, SULLIVAN MALERVY M, HILTY R, MARTENS R, HEMOND J, SULLIVANMALERVY M E

Preparing graphene for photovoltaic cells involves annealing catalyst substrate in hydrogen gas within chemical vapor deposition chamber at atmospheric pressure and exposing it to gas mixture of hydrocarbon/hydrogen having specific pressure.

VLASSIOUK I V, SMIRNOV S N, PETER W H, SABAU A S, DAI S, FULVIO P F, IVANOV I N, LAVRIK N V, DATSKOS P G

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T