国家/地区 中国（6） 世界知识产权组织（2）
IPC部 C（9） H（4） B（2）
IPC大类 C23（9） H01（3） C01（2）
C22（2）
IPC小类 C23C（9） H01L（3） C01B（2）
C22C（2）
IPC C23C016/30（9）
发明人 ZHANG L（3）
公开年 2022（6） 2023（3）
申请年 2022（9）
专利权人 SHANDONG YUN.（2）

Plasma deposition of material onto two dimensional layer of first substrate, involves depositing protective layer directly onto dimensional layer by pulsed plasma deposition process, and depositing second layer onto protective layer by second plasma deposition process.

RIAZIMEHR S, KNOOPS H, SUNDARAM R

Graphene carbide/silicon carbide composite material used in electromagnetic shielding device, comprises multiple graphene of silicon carbide crystal grains uniformly distributed to form thin film.

LI Z, ZHANG L, TU R, XU Q, ZHANG S

Machining of titanium alloy with micro-groove textured cutting tool has different type of tool inserts like plain tool, triangle micro texture tool and triangle texture tool with solid lubricant using tungsten carbide chemical vapor deposition coated insert.

KAUR H, BALA A, SETHI G, CHAWLA K, BAHL A, SINGH J, PRADHAN S, SOPPA I

Preparing two-dimensional gallium nitride material, comprises preparing two-dimensional gallium selenide by chemical vapor deposition using gallium selenide powder as precursor, placing in tube furnace containing a nitrogen source for high-temperature nitriding treatment.

LI G, JIANG H, WANG W

Processing substrates by providing semiconductor substrate, which comprises metal layer formed in dielectric layer and barrier layer between metal layer and dielectric layer, depositing graphene on exposed metal surface, depositing inhibitor layer and depositing dielectric material.

HAUSMANN D M, RAMNANI P G, SHARMA K, LEMAIRE P C, MAHOROWALA A P

Preparation method of two-dimensional molybdenum disulfide tungsten alloy film, involves continuously introducing argon gas, until tubular furnace is cooled to room temperature, after growth is finished.

ZHANG Q, ZHAN Y, LIN N, ZHANG L

Preparing single crystal substrate comprises forming gallium nitride porous layer on surface of sapphire substrate, depositing barrier layer e.g. silica to cover top surface of the porous layer, removing barrier layer, performing epitaxial growth of single crystal layer and separating.

LU J

Boron fiber reinforced copper-based precursor wire for use in nuclear fusion reactor for providing clean energy source, has transition layer which is coated on surface of boron fibers, and copper metal layer coated on surface of transition layer.

ZHENG W, ZHANG K, HAO J, QI J, WANG L, WEN M

Preparation of graphene/molybdenum disulfide heterojunction semiconductor film comprises cleaning copper foil substrate and silicon dioxide/silicon substrate, growing molybdenum-disulfide film and depositing graphene thin membrane.

ZHANG L