国家/地区 中国（9）
IPC部 B（9）
IPC大类 C23（9） B82（7） H01（7）
C30（3） C01（2）
IPC小类 C23C（9） B82Y（6） H01L（5）
C30B（3） C01B（2）
IPC C23C016/34（9）
发明人
公开年 2021（3） 2023（2）
申请年 2020（3）  2022（2） 
专利权人

Preparing gallium nitride nanowire/graphene composite material useful in sterilizing device, comprises providing substrate, forming layer of gold film on positive and negative surfaces of substrate, growing gallium nitride nanowire on substrate covered with gold film, and depositing graphene film.

LI J, FU Y, DAI Y, LIN C, WANG Z, LIN L, YANG Y, HU Y, XU Z, FU Z

Normally-closed gallium nitride integrated device of large threshold voltage used in mobile phone, has sub-gate composed of gate layer connected through graphene film electrode to form series-parallel mixed double high frequency characteristics high electron mobility transistor integrated structure.

LUO M, CHENG T, WANG X, ZU Y, YU C

Applying functional compound on sulfur particles for forming treated sulfur particles, involves using coating composition containing inorganic electroconductive compound, electroconductive carbon compound and organic precursor compound.

HAVERMANS D, SALLARD S, SHAFIQUE A, VANGENEUGDEN D, VANHULSEL A, HARDY A, SALAH S, SHAFIK A, VAN GENUGDEN D, HARDY N

Unbiased photoelectrochemical hydrogen production system based on indium gallium nitride nanocolumn photoelectrodes on graphene comprises light anode connected with light cathode through lead, and electrolyte placed in electrolytic cell.

LI G, LIU Q, LIN J, ZENG Q, ZHANG Z, MO Y, DENG X

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B

Preparing sub-10 nano-stable graphene quantum dot involves placing boron nitride on a metal foil substrate, etching nano-holes on the boron nitride with a helium ion microscope, and using a chemical vapor deposition method.

LIU K, CHEN D, QIAO R, YU D

Grading gallium nitride nano array used for preparing high efficiency, flexible, high-performance gallium nitride-based device comprises graphene nano sheet substrate and upper substrate without catalyst graphene nano sheet damaged.

LI L, YANG H

Epitaxial structure comprises substrate having patterned epitaxial growth surface defining grooves, graphene layer covering patterned epitaxial growth surface, and epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X