国家/地区 中国（6）
IPC部 C（6） H（4）
IPC大类 C23（6） H01（4） C30（2）
IPC小类 C23C（6） H01L（4） C30B（2）
IPC C23C016/34（6）
发明人 CHEN Z（3） HAO Y（3） LV J（3）
ZHANG J（3）
公开年 2016（3） 2017（3）
申请年 2016（6）
专利权人 UNIV XIDIAN（3）

Chemical vapor deposition apparatus for preparing thin film materials e.g. graphene, has main chamber that is for preparation of film material, and subchamber is for scouring of boron source.

DONG G, ZHANG X, TANG Q

Nitride semiconductor surface modification method by putting nitride semiconductor substrate into plasma generator, heating, raising the temperature, and growing vertical structure graphene on nitride semiconductor.

CAO B, LI Z, ZHAO E, YANG S, LIU Y, WU Z, WANG Q

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Growing method of aluminum nitride layer and gallium nitride layer on graphene by magnetic sputtering involves supplying hydrogen to quartz tube furnace containing clean copper tube, cooling and obtaining graphene.

CHEN Z, HAO Y, ZHANG J, LV J

Growing gallium nitride with silicon graphene using magnetron sputtering of aluminum nitride involves using chemical vapor deposition method and growing graphene on metal substrate, obtained product is placing in mixed solution.

CHEN Z, HAO Y, ZHANG J, LV J

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z