国家/地区 韩国（8）
IPC部 C（8）
IPC大类 C01（8） C23（8） H01（6）
IPC小类 C01B（8）
IPC C23C016/44（8）
发明人 HEE L（2） HYUN L J（2） IMSUNGWOO（2）
JEON Y M（2） LEE H S（2） LIM H H（2）
LIM J（2） LIM J C（2） LIM S W（2）
PARK J G（2）
公开年 2021（3） 2022（3） 2023（2）
申请年 2021（8）
专利权人 DAEJOO ELECT.（2） UNIV SINGAPO.（2）

Cathode active materials useful for secondary batteries, comprises carbon-based base material, silicon layer formed on carbon-based base material, and graphene provided on outside of silicon layer.

CHAE S

Synthesizing surface of aluminum oxide graphite for high-purity carbon materials, comprises e.g. raising temperature of reactor, placing aluminum oxide nanoparticles in inner center of reactor, and injecting reaction gas into reactor.

KIM C D, NAMKEE S

Active material used in negative electrode for lithium secondary battery, comprises pores having preset size, and silicon-based compound having preset ratio of peak intensity in region having specific wavelength in Raman spectrum.

PARK G O, YOO S K, CHUNG J H, ZHENG Z, YU S, PARK G

Porous silicon-carbon composite used for negative electrode active material for lithium secondary battery, comprises silicon particles, magnesium fluoride, and carbon.

LIM J C, LEE J, JEON Y M, LIM S W, PARK J G, LEE H S, LIM H H, NAM S J, LEE E, LIM J, HYUN L J, IMSUNGWOO, HEE L, JIN N, PARK S

Porous silicon-based carbon composite used for forming negative electrode active material, comprises silicon particles capable of intercalating and de-intercalating lithium, magnesium compound, and carbon, and has preset molar ratio of magnesium atoms with respect to silicon atoms.

PARK J G, LEE H S, JEON Y M, OH S M, PARK H S, LIM S W, LIM H H, LIM J C, LEE J H, HUNSOO P, IMSUNGWOO, HEE L, LIM J, HYUN L J

Structure e.g. porous metal-coated structure used for e.g. catalytic application, comprises substrate comprising activated adsorbent material, and metal material deposited on substrate.

PEPIN P, ETHRIDGE K, THOMSON C, HOLBROOK B, ESRIDGE K

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A