国家/地区 韩国（25）
IPC部 C（25）
IPC大类 C01（25）
IPC小类 C01B（25）
IPC C23C016/44（25）
发明人 LIM J（3） PARK J G（3） HEE L（2）
HYUN L J（2） IFUKU R（2） IMSUNGWOO（2）
JEON Y M（2） KABUKI N（2） LEE H S（2）
LEE J（2） LIM H H（2） LIM J C（2）
LIM S W（2） MATSUMOTO T（2） OH S M（2）
公开年 2021（5） 2011（4） 2014（4） 2022（3） 2015（2） 2017（2） 2023（2）
申请年 2021（6）  2010（3）  2019（3）  2012（2）  2014（2）  2015（2）  2016（2） 
专利权人 DAEJOO ELECT.（3） UNIV SINGAPO.（3） SAMSUNG ELEC.（2） TOKYO ELECTR.（2）

Cathode active materials useful for secondary batteries, comprises carbon-based base material, silicon layer formed on carbon-based base material, and graphene provided on outside of silicon layer.

CHAE S

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Active material used in negative electrode for lithium secondary battery, comprises pores having preset size, and silicon-based compound having preset ratio of peak intensity in region having specific wavelength in Raman spectrum.

PARK G O, YOO S K, CHUNG J H, ZHENG Z, YU S, PARK G

Porous silicon-carbon composite used for negative electrode active material for lithium secondary battery, comprises silicon particles, magnesium fluoride, and carbon.

LIM J C, LEE J, JEON Y M, LIM S W, PARK J G, LEE H S, LIM H H, NAM S J, LEE E, LIM J, HYUN L J, IMSUNGWOO, HEE L, JIN N, PARK S

Porous silicon-based carbon composite used for forming negative electrode active material, comprises silicon particles capable of intercalating and de-intercalating lithium, magnesium compound, and carbon, and has preset molar ratio of magnesium atoms with respect to silicon atoms.

PARK J G, LEE H S, JEON Y M, OH S M, PARK H S, LIM S W, LIM H H, LIM J C, LEE J H, HUNSOO P, IMSUNGWOO, HEE L, LIM J, HYUN L J

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Core-shell structure useful in anode material for secondary batteries comprises metal core, and shell which is graphene.

CHOI H Y, PARK J W, EUGENE L, DOH C H, BAE Y

Silicon-carbon composites in anode active material for secondary battery comprises core-shell structure comprising e.g. core comprising silicon-containing constituent with silicon crystal and first carbon and shell comprising second carbon.

OH S M, PARK J G, LIM J