国家/地区 中国（7） 台湾（4） 美国（4） 韩国（3） 英国（2） 世界知识产权组织（2）
IPC部 C（14）
IPC大类 C23（14）
IPC小类 C23C（14） H01L（9） C01B（4）
C30B（3） H01J（3） H01M（3）
IPC C23C016/455（14）
发明人 DIXON S（2） GUINEY I（2）
公开年 2022（14）
申请年 2021（6）  2022（6）  2020（2） 
专利权人 PARAGRAF LTD（2）

-Product comprises solid state electrolyte particle coated with a coating consisting essentially of metal oxide, and prepared by depositing a coating on a solid state electrolyte particle by atomic layer deposition.

WOOD M, MILLER J, ESPITIA J A, YE J

Preparing single crystal substrate comprises forming gallium nitride porous layer on surface of sapphire substrate, depositing barrier layer e.g. silica to cover top surface of the porous layer, removing barrier layer, performing epitaxial growth of single crystal layer and separating.

LU J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Apparatus for depositing two-dimensional material, comprises planar high-frequency antenna formed on second surface of dielectric window, and first gas nozzle configured to provide source gas into chamber.

SHIN H, SHIN K, LEE C, LEE C S, SHIN K W, SHIN H J

Producing zinc-titanium oxide composite membrane, comprises e.g. forming a titanium oxide film on a substrate using a first sub-cycle, and forming a zinc oxide layer on the titanium oxide layer using a second sub cycle.

LEE J, KIM D, SUNG S J, KANG C, PARK S, YANG K J

Preparing silicon negative electrode coated with polymer polyurea coating for improving long-term stable cycle life of silicon-based negative electrode, involves using silicon material or silicon carbon material as active material, and adding binder and conductive agent to prepare electrode.

SUN Y, MU T, SUN X

Preparing copper-based graphene useful for preparing copper-based graphene conductor of electric wire cable, comprises performing surface cleaning and drying on copper material, stacking with high temperature resistant substrate, annealing, and growing graphene layer on copper material surface.

FU J, YANG J, SHEN H, ZHANG W, MA Y

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

New platinum-containing compound useful in precursor composition for producing platinum-containing thin film.

CHANG K, SHIN H S, PARK T J, KWON S H