国家/地区 美国（5） 韩国（4） 世界知识产权组织（4） 日本（3）
IPC部 C（7）
IPC大类 C23（7）
IPC小类 C23C（7）
IPC C23C016/511（7）
发明人 IFUKU R（3） MATSUMOTO T（3） SUGIURA M（2）
UEDA H（2） WADA M（2）
公开年 2021（7）
申请年 2020（4）  2021（3） 
专利权人 TOKYO ELECTR.（3）

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Method for preparing graphene film by chemical vapor deposition electron irradiation, involves attracting electrons in carbon plasma to surface of substrate to assist growth, forming electron irradiation, and depositing carbon plasma on substrate to generate graphene carbon film.

DIAO D, CHEN X, WANG C

Apparatus for manufacturing graphene by using plasma, has gas supply for supplying reducing gas into reaction chamber at height from upper surface of substrate supporter in height direction of reaction chamber.

LEE C, LEE E, SHIN H, BYUN K, KIM S, BYUN K E, SHIN H J, LEE C S

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Processing device for forming film, consists of processing container having thermal sprayed ceramic coating on inner wall, mounting table for holding substrate and control unit for performing precoating and film forming.

WADA M, MATSUMOTO T, SUGIURA M, IFUKU R, UEDA H, KURYOTA L

System for growing crystalline material, has optical emission spectrometer (OES) that controls parameter in closed loop and maintains required proposition of plasma constituent for growth of crystalline materials in microwave plasma reactor.

SHARDA T, BHANDARI R, RAJNEESH B, TARUN S

Forming opening using mask involves forming mask on feature layer, forming first opening in mask to expose portion of feature layer, forming carbon layer on mask and removing portions of carbon layer and exposed portion of feature layer.

LING M, KWON T, KIM J M, YING C C