国家/地区 中国（6） 美国（3） 世界知识产权组织（2）
IPC部 C（10） H（4）
IPC大类 C23（10）
IPC小类 C23C（10） C01B（4） H01L（3）
IPC C23C016/52（10）
发明人 BRODEUR C L（2） NAGEL C J（2）
公开年 2022（5） 2023（5）
申请年 2022（10）
专利权人 QUANTUM ELEM.（2）

Graphene carbide/silicon carbide composite material used in electromagnetic shielding device, comprises multiple graphene of silicon carbide crystal grains uniformly distributed to form thin film.

LI Z, ZHANG L, TU R, XU Q, ZHANG S

Gas pipeline for transmitting process gas from gas supply source to reaction chamber of semiconductor device, has first section and third section that are respectively provided with first heating unit and second heating unit capable of independently controlling temperature.

YIN N

Process for instantiating elemental metal within ultramicro pore of nanoporous carbon powder composition involves initiating gas flow in reactor assembly, reactor chamber containing nanoporous carbon powder, first porous frit, second porous frit, reactor head space, and computer processing unit.

BRODEUR C L, NAGEL C J

Negative-pressure roll-to-roll preparation device for preparing graphene copper material, comprises pipeline, pay-off mechanism, take-up mechanism, heating mechanism, protective gas and carbon source supply mechanism, and valves.

WU Q, SONG S, MA Y

Formation of graphene layer for semiconductor device, involves exposing substrate comprising conductive and dielectric materials to plasma to clean conductive material, and exposing substrate to another plasma to form graphene layer.

MEBARKI B, CHUA T C, VALENCIA C W, LEE J J, TANG X, CHEN X

Reactor assembly comprises gas inlet and one or more gas outlets and reactor chamber containing nanoporous carbon material arranged within cup and covered with cap, where first porous frit defining floor of reactor chamber arranged within cup and covered with cap, and second porous frit.

BRODEUR C L, NAGEL C J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Copper foil coating device useful in technical field of electric material, has rotating pipe whose top end extends to inside of methane concentration detecting box, where bottom end of rotating pipe extends to inside of blower.

Continuous chemical vapor deposition thin film manufacturing device comprises sample introducing cabin, heating cabin, process chamber and cooling chamber.

QU Y, TAN H, SHEN D, WANG W

Directly growing patterned graphite on integrated circuit chip, involves cutting ultra-thin copper foil, pressing, placing chip sample in thermal chemical vapor deposition system, dipping into copper corrosion liquid, etching lower copper through a poly(methyl methacrylate) layer and drying.

HU L, DENG J, QIAN F, XIE Y, XU C