国家/地区 中国（20） 美国（5） 世界知识产权组织（4） 韩国（3）
IPC部 C（27）
IPC大类 C23（27）
IPC小类 C23C（27） C01B（13） H01L（6）
H01M（6） B22F（4） C22C（4）
B32B（3） B82Y（3） H01B（3）
B01J（2） C01G（2） C09D（2）
C30B（2） H05K（2）
IPC C23C016/56（27）
发明人 LI X（4） DUAN Y（3） HUANG D（3）
SHAO L（3） SHI H（3） WANG X（3）
HU L（2） JIANG H（2） LI J（2）
LI M（2） LI Y（2） LI Z（2）
LU J（2） WANG W（2） WANG Y（2）
公开年 2022（20） 2023（7）
申请年 2022（27）
专利权人 CHINESE ACAD.（3） CHONGQING GR.（3） BEIJING GRAP.（2）

Anode active material comprises carbon material, and silicon structure attached to carbon material, where silicon structure includes silicon nanoparticle, metal thin film formed on surface of silicon nanoparticle, and graphene coated on surface of metal thin film.

KIM Y H, SON M W, KIM Y, SUN M

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Preparing a sponge nickel-loaded nitrogen and fluorine double-doped vertical graphene useful in e.g. preparing anode and cathode materials for lithium-sulfur batteries, comprises e.g. obtaining Ni(AC)2 aqueous solution, adding N2H4H2O and mixing to obtain reaction solution.

TU J, WANG X, QIU Z, XIA X

Manufacturing electrostatic self-assembled silicon/reduced graphene oxide (rGO)/carbon nanofibers composite as anode materials for lithium-ion battery, involves obtaining silicon (Si)-(3-aminopropyl)triethoxysilane (APTES) solution by adding predetermined silicon nanoparticles to piranha solution.

CONG R, LEE C S, LEECHANGSUP, FEMALE T

Composite current collector useful for enhancing conductivity, comprises e.g. high molecular support layer as central layer, nano-silver wire reinforced conductive layer arranged on both sides, the metal layer and the graphene reinforced conductive layer arranged between the metal layer.

ZHANG G, LI X, XIA J, ZHU Z, WANG S

Box type negative-pressure roll-to-roll preparation device, has protective gas and carbon source supply mechanism connected with box body to introduce carbon source and protective gas into box body.

WU Q, SONG S, MA Y

Formation of graphene layer for semiconductor device, involves exposing substrate comprising conductive and dielectric materials to plasma to clean conductive material, and exposing substrate to another plasma to form graphene layer.

MEBARKI B, CHUA T C, VALENCIA C W, LEE J J, TANG X, CHEN X

Method for preparing metal-graphene composite material by using electronic component, involves preparing metal-graphene composite material by hot-pressing sintering, and applying pulse current to metal substrate to perform surface heat treatment to metal substrate.

WANG X, HUO Y, LI J, CAO Z, XIAO Z

Preparing two-dimensional gallium nitride material, comprises preparing two-dimensional gallium selenide by chemical vapor deposition using gallium selenide powder as precursor, placing in tube furnace containing a nitrogen source for high-temperature nitriding treatment.

LI G, JIANG H, WANG W

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D