国家/地区 中国（6）
IPC部 C（6）
IPC大类 C25（6） H05（4）
IPC小类 C25D（6）
IPC C25D005/54（6）
发明人 MA Y（6）
公开年 2021（3） 2023（3）
申请年 2021（4）  2020（2） 
专利权人 CHINESE ACAD.（5）

Forming substrate in substrate hole used in plating technology involves pre-processing surface of insulating base material and hole structure, coating graphene dispersion, applying different rotation radius and different rotating speeds to insulating base and plating material with conductive layer.

XIANG Q, YE G, CAO X, ZHANG J, LU J, MA Y, ZHENG K

Strengthening interfacial bonding force of metal and insulating substrate, comprises e.g. pretreating surface and/or pore structure of insulating substrate, coating prepared graphene dispersion liquid on surface and/or pore structure of charge-adjusted insulating substrate, and drying.

CAO X, YE G, LU J, ZHANG J, MA Y, ZHENG K

Graphene/metal composite layer structure useful in item in electroplating process, preferably used for flexible circuit board, comprises interpenetrating network formed by interlocking electroplated metal and graphene surfaces.

YE G, CAO X, ZHANG J, ZHENG K, LU J, MA Y

Method for treating substrate surface for electroplating flexible circuit board, involves pre-washing surface of substrate to be electroplated, and coating prepared graphene dispersion liquid on pre-washed substrate surface to be electroplated to form conductive layer for direct electroplating.

ZHENG K, CAO X, YE G, ZHANG J, MA Y

Processing substrate hole comprises e.g. pre-washing substrate, soaking pre-washed substrate in prepared graphene dispersion liquid, soaking liquid in hole structure, ultrasonically treating, drying to form conductive layer for direct plating.

CAO X, ZHENG K, YE G, ZHANG J, MA Y

Method for preparing reduced graphene oxide supported titanium dioxide film, involves placing reaction vessel containing mixed solution in oven, obtaining product after reaction of mixed solution, and cleaning and drying product to obtain titanium dioxide film.

ZHANG Y, SHU Z, ZHANG J, HU C, WANG Y, MA Y, ZHOU G, WANG S, SHEN X, LV J, ZHAO M