国家/地区 中国（5） 韩国（2） 美国（2）
IPC部 C（7）
IPC大类 C30（7）
IPC小类 C30B（7） C01B（3） C23C（3）
B82Y（2）
IPC C30B029/64（7）
发明人 LIU K（2） LIU Z（2） PENG H（2）
WANG E（2） WU M（2） XU X（2）
YU D（2） ZHANG Z（2）
公开年 2018（4） 2017（3）
申请年 2017（7）
专利权人 UNIV PEKING（4）

Nitrogen-doped large single crystal graphene film used as transparent conductive film for e.g. transparent electrode, is obtained by doping nitrogen atom into graphene lattice by graphite nitrogen.

LIU Z, PENG H, LIN L, SUN L, ZHANG J

Continuous preparation of ultra-large single crystal film useful in e.g. graphene film, involves heating single small crystal domain and growing ultra-large single crystal film on surface of high-temperature resistant substrate.

WU M, ZHANG Z, XU X, YU D, WANG E, LIU K

Growing thickness of reduced graphene oxide comprises dispersing reduced graphene oxide powder, adding metal nano powder to obtain dispersed mixture, drying dispersed mixture, and heating.

JEE Y H, LEE S H, KIM K W

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Preparing graphene single crystal film comprises laminating copper single-crystal thin film/sapphire, annealing and depositing on single-crystal thin film surface under atmospheric pressure chemical vapor deposition.

PENG H, DENG B, LIU Z

Manufacture of single crystal copper-nickel alloy for preparing multilayer monocrystalline graphene, involves carrying out nickel plating on single crystal copper foil, and annealing to obtain copper single crystal copper foil.

ZHANG Z, XU X, WU M, YU D, WANG E, LIU K