国家/地区 美国（6） 台湾（4） 中国（2） 韩国（2） 世界知识产权组织（2）
IPC部 C（7）
IPC大类 H01（7） C01（5） C23（4）
C08（2）
IPC小类 H01J（7）
IPC H01J037/32（7）
发明人
公开年 2022（7）
申请年 2021（4）  2022（2） 
专利权人 APPLIED MATE.（2）

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Producing photoluminescence material involves placing plastic piece into working solution which is water, applying micro-plasma onto surface of the working solution, and degrading the plastic piece into multiple smaller molecular and graphene quantum dot.

CHIANG W, WENG R, WENG R J

Composite material used for functionalizing carbon structures within plasma reactor, or liquid collection facility, comprises polymer, and graphene-containing material, where composite material has glass transition temperature that is 10% greater than glass transition temperature of polymer.

KC C B, BALDWIN J, HINES M, VANHEUSDEN K, ROGOJINA E, COOK D, LANNING B, ANZELMO B H, STOWELL M W

Apparatus for depositing two-dimensional material, comprises planar high-frequency antenna formed on second surface of dielectric window, and first gas nozzle configured to provide source gas into chamber.

SHIN H, SHIN K, LEE C, LEE C S, SHIN K W, SHIN H J

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Semiconductor component useful in plasma reaction device and plasma etching process of process gas e.g. carbon tetrafluoride and oxygen, comprises conductive heat conducting material filled in pores of first corrosion resistant coating.

NI T, CHEN X, ZHU S