国家/地区 韩国（6）
IPC部 H（6） C（4）
IPC大类 H01（6） C23（4） C01（2）
H05（2）
IPC小类 H01J（6） H01L（5） C23C（4）
C01B（2） H05H（2）
IPC H01J037/32（6）
发明人 IFUKU R（3） MATSUMOTO T（3） SUGIURA M（2）
UEDA H（2） WADA M（2）
公开年 2021（6）
申请年 2020（6）
专利权人 TOKYO ELECTR.（3）

Support unit for substrate processing apparatus, has electrode that is arranged between main portion and dielectric layer and is made of material including graphene.

SIM H

Formation of film involves preparing substrate containing conductive film formed on base substrate, forming composite layer containing graphene layer, and electrically connecting conductive film with former film through composite layer.

NI Z, MATSUMOTO T, IFUKU R, YOU W

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Liquid chip for electron microscope, comprises respective upper surfaces of upper chip and lower chip arranged to face each other, and thin film layer transferred to cover hole portion, and made of conductive two-dimensional material.

LEE J, KOO K, YUK J, YOOK J M, KOO K M, SANG L J

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Processing device for forming film, consists of processing container having thermal sprayed ceramic coating on inner wall, mounting table for holding substrate and control unit for performing precoating and film forming.

WADA M, MATSUMOTO T, SUGIURA M, IFUKU R, UEDA H, KURYOTA L