国家/地区 美国（10） 韩国（5） 世界知识产权组织（5） 日本（4） 中国（3） 欧洲专利局（EPO）（3） 台湾（3）
IPC部 C（11）
IPC大类 C01（11）
IPC小类 C01B（11） H01L（11） B82Y（6）
C07C（3） B82B（2） C07D（2）
C08G（2） C23C（2）
IPC H01L051/00（11）
发明人 MILLEN K（2） MUELLEN K（2） YAMAZAKI Y（2）
公开年 2014（8） 2013（2）
申请年 2013（11）
专利权人 BASF CHINA C.（2） BASF SE（2） MAX PLANCK G.（2） TOSHIBA KK（2）

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Synthesizing graphene nanoribbon used in e.g. field effect transistor or bipolar junction transistor, comprises polycyclization of linearly conjugated aryl compounds to provide graphene nanoribbon precursor.

KLEIN J P

Graphene composite layer for electrode for electronic device, has graphene layer and coating layer containing amine-based compound formed on surface(s) of graphene layer.

CHANG K G, JUN S H, YEONG K S, YONG P G

New oligophenylene monomer useful in polymeric precursor for preparing graphene nanoribbons that used are in thin film semiconductor of electronic, optical, or optoelectronic device e.g. organic field effect transistor device.

MUELLEN K, FENG X, CAI J, RUFFIEUX P, FASEL R, NARITA A, TSAI J, MULLEN K, MILLEN K

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K

Semiconductor device e.g. large scale integration (LSI) has graphene on catalyst metal film and carbon nano-tubes which penetrates contact hole on catalyst metal particles.

KATAGIRI M, YAMAZAKI Y, SAKAI T, SAKUMA N, SUZUKI M, SAKUMA H

Thermal management device e.g. heater or heater component comprises a composition comprising graphene sheets.

BROOKS L, SCHEFFER D

Making nanoparticles of target material, involves mixing graphene oxide with aqueous solvent to give aqueous solution, mixing target material with organic solvent to give organic solution, and mixing aqueous solution with organic solution.

LIM J A, SONG Y, HONG J, YOO D Y, KIM H, SONG Y W, HONG J M, KIM H S

Semiconductor device has wiring layer which is formed of graphene and in contact with carbon nanotube on upper surface of portion of catalytic layer outside hole so that portions of catalytic layer are perforated and continuous films.

SAITO T, WADA M, ISOBAYASHI A, YAMAZAKI Y, KAJITA A

Manufacturing graphene used e.g. as base material for electronic circuits, by attaching support layer on graphene layer, removing catalyst metal layer, disposing substrate on graphene layer, and separating support layer from graphene layer.

MOON J, PARK W, JUNG M, RHO J, SEO B