国家/地区 中国（8） 世界知识产权组织（2）
IPC部 C（9）
IPC大类 C01（9） H01（6）
IPC小类 C01B（9）
IPC C01B031/04（9） H01L021/205（2） H01L021/324（2）
H01M004/38（2）
发明人 ZHANG Y（9）
公开年 2013（9）
申请年 2012（9）
专利权人 UNIV XIDIAN（4）

Preparation of graphene composite material involves suspending multilayer stack of graphene as graphene sheet in solvent and obtaining graphite suspension, and adding active substance to dispersion of graphene.

CHEN J, WU Y, XIE C, LIN G, LIN J, ZHANG Y, PENG C

Preparation method for graphene composite material characterized by greatly increasing surface area, electric conductivity and charge/discharge speed of electric capacitance.

WU Y, XIE C, ZHANG Y, PENG C, CHEN J, LIN G, LIN J

Preparation of graphene wafer involves activating substrate, in which wafer is to-be-deposited, controlling thickness of graphene by ion-implantation process, contacting with surface of graphite, and applying external physical field.

XIA Y, LI C, XIE J, LUO W, ZHANG Y

Material composition used for electrode e.g. cathode for battery e.g. lithium-sulfur battery, comprises graphene oxide-sulfur nanocomposite including graphene oxide containing functional groups, and sulfur bonded to carbon atoms.

ZHANG Y, CAIRNS E J, JI L, RAO M, CAIRNS E

Graphene film preparation comprises providing graphene thin film grown on substrate, spin-coating polyvinyl alcohol acetal glue on film surface, and suspending whole thin film in etching solution.

ZHANG Y, GAN Z, FENG Q, WEI Y

Preparing graphene film comprises cutting silicon substrate and then cleaning, putting the cleaned substrate into chemical vapor deposition system reaction chamber, and growing carbon layer on the substrate.

LEI T, GUO H, ZHANG Y, ZHAO Y, ZHANG K, TANG X

Preparation of silicon-substrate patterned graphene involves passing argon gas-carrying carbon tetrachloride to quartz tube with to-be-patterned film, depositing nickel film on obtained carbon film, annealing and removing nickel film.

LEI T, GUO H, ZHANG Y, ZHANG K, ZHANG C, ZHAO Y

Preparing patterned graphene material comprises removing pollutant on surface of silicon carbide wafer, cleaning surface of silicon carbide, and coating a photoresist layer on the mask surface of the silicon dioxide layer.

TANG X, GUO H, LEI T, ZHAO Y, ZHANG Y, ZHANG K

Preparation of patterned graphene material by heating patterned substrate, introducing argon and chlorine gas mixture, reacting chlorine with exposed silicon carbide, forming carbon film, electron beam depositing nickel layer, and annealing.

ZHAO Y, LEI T, ZHANG Y, ZHANG K, GUO H, HU Y